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SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

    Buy cheap SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components from wholesalers
     
    Buy cheap SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components from wholesalers
    • Buy cheap SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components from wholesalers

    SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

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    Brand Name : OTOMO
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : 2N5401
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    SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

    TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP)


    FEATURE

    Ÿ Switching and Amplification in High Voltage

    Ÿ Applications such as Telephony

    Ÿ Low Current

    Ÿ High Voltage



    ORDERING INFORMATION

    Part NumberPackagePacking MethodPack Quantity
    2N5401TO-92Bulk1000pcs/Bag
    2N5401-TATO-92Tape2000pcs/Box

    MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)


    SymbolParameterValueUnit
    VCBOCollector-Base Voltage-160V
    VCEOCollector-Emitter Voltage-150V
    VEBOEmitter-Base Voltage-5V
    ICCollector Current-0.6A
    PCCollector Power Dissipation625mW
    R0 JAThermal Resistance From Junction To Ambient200Š / W
    TjJunction Temperature150Š
    TstgStorage Temperature-55~+150Š


    ELECTRICAL CHARACTERISTICS

    Ta=25 Š unless otherwise specified


    ParameterSymbolTest conditionsMinTypMaxUnit
    Collector-base breakdown voltageV(BR)CBOIC= -0.1mA,IE=0-160V
    Collector-emitter breakdown voltageV(BR)CEOIC=-1mA,IB=0-150V
    Emitter-base breakdown voltageV(BR)EBOIE=-0.01mA,IC=0-5V
    Collector cut-off currentICBOVCB=-120V,IE=0-50nA
    Emitter cut-off currentIEBOVEB=-3V,IC=0-50nA

    DC current gain

    hFE(1)VCE=-5V, IC=-1mA80
    hFE(2)VCE=-5V, IC=-10mA100300
    hFE(3)VCE=-5V, IC=-50mA50
    Collector-emitter saturation voltageVCE(sat)IC=-50mA,IB=-5mA-0.5V
    Base-emitter saturation voltageVBE(sat)IC=-50mA,IB=-5mA-1V
    Transition frequencyfTVCE=-5V,IC=-10mA, f =30MHz100300MHz


    CLASSIFICATION OF hFE(2)

    RANKABC
    RANGE100-150150-200200-300

    Typical Characteristics





    Package Outline Dimensions

    SymbolDimensions In MillimetersDimensions In Inches
    MinMaxMinMax
    A3.3003.7000.1300.146
    A11.1001.4000.0430.055
    b0.3800.5500.0150.022
    c0.3600.5100.0140.020
    D4.3004.7000.1690.185
    D13.4300.135
    E4.3004.7000.1690.185
    e1.270 TYP0.050 TYP
    e12.4402.6400.0960.104
    L14.10014.5000.5550.571
    01.6000.063
    h0.0000.3800.0000.015




    TO-92 7DSH DQG 5HHO









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