400V 1.0Amp Ultra Fast Rectifier Diodes High Forward Surge Current Capability

1.0 Amp Fast Recovery Rectifier Diodes 50 to 600 Volts SF16 DO-41

SF11~SF18 DO-41 Datasheet.pdf

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• The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
• Open Junction chip
• Low reverse leakage
• High forward surge current capability
• High temperature soldering guaranteed: 250 C/10 seconds at terminals

• Case : Molded plastic body
• Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
• Polarity : Polarity symbol marking on body
• Mounting Position : Any
• Weight : 0.0088 ounce, 0.25 grams

Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Parameter																		SYMBOLS	SF11	SF12			SF13	SF14			SF15	SF16	SF17			SF18			UNITS
Maximum repetitive peak reverse voltage																		VRRM	50	100			150	200			300	400	500			600			V
Maximum RMS voltage																		VRMS	35	70			105	140			210	280	350			420			V
Maximum DC blocking voltage																		VDC	50	100			150	200			300	400	500			600			V
Maximum average forward rectified current at TL =100 C																		I(AV)	1.0																A
Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load																		IFSM	30.0																A
Maximum instantaneous forward voltage at 1.0A																		VF	0.95								1.25		1.7						V
Maximum DC reverse current T A =25 C at rated DC blocking voltage TA=125 C																		IR	10.0 500																u A
Maxinum reverse recovery time(Note 1)																		Trr	35																ns
Typical junction capacitance (Note2)																		CJ	30.0																pF
Typical thermal resistance																		RqJA	65.0																C/W
Operating junction and storage temperature range																		TJ,TSTG	-55 to +150																C

Note: 1.Reverse recovery time test condition: IF=0.5A IR=1.0A Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

Guangdong Huixin Electronics Technology Co., Ltd. (hereinafter referred to as Huixin ) is specialized in research, production, sales and service of semiconductor devices. Huixin's factory lies in Jiangsu Provicne of China, its management center is in southern China, Guangdong Province. 

Aiming at providing customers with efficient services, the sales offices and service outlets have covered more than 30 regions of the world, including Europe, America, India, Korea, Asia and others. 

Huixin has a wide range production line of discrete semiconductor, including diodes, transistor, bridge rectifiers, mosfet, which have been widely used in lighting, power supply, automotive electronics, medical electronics, aerospace, communication products, household appliances, smart meters and other fields.

With factory building area over 100,000 Sq.meters, monthly capacity more than 1,000 million pieces, Huixin has become one of the leading suppliers in electronic components industry in China.