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4" Sapphire Based GaN Templates Semiconductor Substrate

4" Sapphire Based GaN Templates Semiconductor Substrate

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Brand Name :	ZMKJ
Model Number :	4inch GaN-sapphire
Price :	by case
Payment Terms :	T/T, Western Union, paypal
Supply Ability :	50pcs/month
Delivery Time :	in 30days

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4" Sapphire Based GaN Templates Semiconductor Substrate

2inch 4inch 4" Sapphire based GaN templates GaN film on sapphire substrate

Properties of GaN

Chemical properties of GaN

1) At room temperature, GaN is insoluble in water, acid and alkali.
2)Dissolved in a hot alkaline solution at a very slow rate.
3) NaOH, H2SO4 and H3PO4 can quickly corrode the poor quality of
GaN, can be used for these poor quality GaN crystal defect
detection.
4) GaN in the HCL or hydrogen, at high temperature presents
unstable characteristics.
5) GaN is the most stable under nitrogen.

Electrical properties of GaN

1) The electrical properties of GaN are the most important factors affecting the device.

2) The GaN with no doping was n in all the cases, and the electron concentration of the best sample was about 4*(10^16)/c㎡.

3) Generally, the prepared P samples are highly compensated.

Optical properties of GaN

1) Wide band gap compound semiconductor material with high band width (2.3~6.2eV), can cover the red yellow green, blue, violet and ultraviolet spectrum, so far is that any other semiconductor materials are unable to achieve.

2) Mainly used in blue and violet light emitting device.

Properties of GaN Material

1) High frequency property, arrive at 300G Hz. (Si is 10G & GaAs is 80G)

2) High temperature property, Normal work at 300℃, very suitable for aerospace, military and other high temperature environment.

3) The electron drift has high saturation velocity, low dielectric constant and good thermal conductivity.

4) Acid and alkali resistance, corrosion resistance, can be used in harsh environment.

5) High voltage characteristics, impact resistance, high reliability.

6) Large power, the communication equipment is very eager.

Application of GaN

Main usage of GaN:

1) light emitting diodes, LED

2) field effect transistors, FET

3) laser diodes, LD

Specification

aracteristic Specification

Other relaterd 4INCH GaN Template Specification

	GaN/ Al₂O₃ Substrates (4") 4inch
Item	Un-doped	N-type	High-doped N-type
Size (mm)	Φ100.0±0.5 (4")
Substrate Structure	GaN on Sapphire(0001)
SurfaceFinished	(Standard: SSP Option: DSP)
Thickness (μm)	4.5±0.5; 20±2;Customized
Conduction Type	Un-doped	N-type	High-doped N-type
Resistivity (Ω·cm)(300K)	≤0.5	≤0.05	≤0.01
GaN Thickness Uniformity	≤±10% (4")
Dislocation Density (cm-2)	≤5×108
Useable Surface Area	＞90%
Package	Packaged in a class 100 clean room environment.

Crystal structure	Wurtzite
Lattice constant (Å)	a=3.112, c=4.982
Conduction band type	Direct bandgap
Density (g/cm3)	3.23
Surface microhardness (Knoop test)	800
Melting point (℃)	2750 (10-100 bar in N2)
Thermal conductivity (W/m·K)	320
Band gap energy (eV)	6.28
Electron mobility (V·s/cm2)	1100
Electric breakdown field (MV/cm)	11.7

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4" Sapphire Based GaN Templates Semiconductor Substrate

4" Sapphire Based GaN Templates Semiconductor Substrate

4" Sapphire Based GaN Templates Semiconductor Substrate

Chemical properties of GaN

Electrical properties of GaN

Optical properties of GaN

Properties of GaN Material

1) High frequency property, arrive at 300G Hz. (Si is 10G & GaAs is 80G)

Main usage of GaN:

5G saw gan templates

4" gan templates

GaN semiconductor Substrate

4" Sapphire Based GaN Templates Semiconductor Substrate

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