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SILICON CARBIDE CRUCIBLE, METALLURGY, SEMICONDUCTOR AND OPTOELECTRONIC, HIGH TEMPERATURE MELTING

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Brand Name :	ZG
Model Number :	MS
Certification :	CE
Price :	Negotiation
Payment Terms :	L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :	10000 pieces per month
Delivery Time :	5-8 working days

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SILICON CARBIDE CRUCIBLE, METALLURGY, SEMICONDUCTOR AND OPTOELECTRONIC, HIGH TEMPERATURE MELTING

Silicon Carbide Crucible

Silicon Carbide Crucible Good thermal conductivity Good thermal shock resistance Good abrasion resistance

We are an export-oriented enterprise which integrates design, development, production and service. Due to low labour costs and highly skilled work force & state of the art production facility, we are able to manufacture high quality products at lowest prices and provide value for money. We sincerely welcome all friends home and abroad to contact us,either by establishing business relationships or to work together to obtain mutual benefits.

Performance	UNIT	HS-A	HS-P	HS-XA
Grain Size	μm	4-10	4-10	4-10
Density	g/cm	≥3.1	3.0-3.1	>3.1
Hardness (Knoop)	Kg/mm²	2800	2800	2800
Flexural Strength 4 pt @ RT	MPa*m1/2	385	240	420
Flexural Strength 4 pt @ RT	*10³1b/in²	55	55	55
Compressive Strength @ RT	Mpa	3900		3900
Compressive Strength @ RT	*10³1b/in²	560		560
Modulus of Elasticity @ RT	Gpa	410	400	410
Modulus of Elasticity @ RT	*10³1b/in²	59	58	59
Weibull Modulus (2 parameter)		8	19	12
Poisson Ratio		0.14	0.14	0.14
Fracture Toughness @ RT Double Torsion & SENB	MPa*m1/2	8	8	8
Fracture Toughness @ RT Double Torsion & SENB	*1³1b/in²in½	8	8	8
Coefficient of Thermal Expansion RT to 700℃	X10-6mm/mmK	4.02	4.2	4.02
Coefficient of Thermal Expansion RT to 700℃	X10-6 in/in°F	2.2	2.3	2.2
Maximum Service Temp.Air Mean Specific Heat @ RT	°C	1900	1900	1900
Maximum Service Temp.Air Mean Specific Heat @ RT	J/gmK	0.67	0.59	0.67
Thermal Conductivity @ RT	W/mK	125.6	110	125.6
Thermal Conductivity @ RT	Btu/ft h°F	72.6	64	72.6
@200°C	W/mK	102.6		102.6
@200°C	Btu/ft h°F	59.3		59.3
@400°C	W/mK	77.5		77.5
@400°C	Btu/ft h°F	44.8		44.8
Permeability @ RT to 1000°C	31MPa below No gas leakage
Electrical Resistivity @ RT	Ohm-cm	102-106	N/A	102-106
Emissivity		0.9	0.9	0.9

Application:

SiC crucibles are commonly used in metallurgy, semiconductor and optoelectronic industries for high temperature melting.

Feature requirements:

High temperature chemical stability
Superior high temperature strength
Thermal shock resistance
Corrosion resistance of acid and alkali
Excellent thermal conductivity

Why better than others:

Customized services
Stable quality and fast delivery

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SILICON CARBIDE CRUCIBLE, METALLURGY, SEMICONDUCTOR AND OPTOELECTRONIC, HIGH TEMPERATURE MELTING

SILICON CARBIDE CRUCIBLE, METALLURGY, SEMICONDUCTOR AND OPTOELECTRONIC, HIGH TEMPERATURE MELTING

SILICON CARBIDE CRUCIBLE, METALLURGY, SEMICONDUCTOR AND OPTOELECTRONIC, HIGH TEMPERATURE MELTING

410Gpa Silicon Carbide Ceramics

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SILICON CARBIDE CRUCIBLE, METALLURGY, SEMICONDUCTOR AND OPTOELECTRONIC, HIGH TEMPERATURE MELTING

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