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FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET

    Buy cheap FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET from wholesalers
     
    Buy cheap FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET from wholesalers
    • Buy cheap FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET from wholesalers

    FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET

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    Brand Name : Anterwell
    Model Number : FQP30N06
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 6900pcs
    Delivery Time : 1 day
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    FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET


    Stock Offer (Hot Sell)

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    FQP30N06

    60V N-Channel MOSFET


    General Description

    These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.


    Features

    • 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V

    • Low gate charge ( typical 19 nC)

    • Low Crss ( typical 40 pF)

    • Fast switching

    • 100% avalanche tested

    • Improved dv/dt capability

    • 175°C maximum junction temperature rating


    Absolute Maximum Ratings TC = 25°C unless otherwise noted

    SymbolParameterFQP30N06Units
    VDSSDrain-Source Voltage60V
    ID

    Drain Current - Continuous (TC = 25°C)

    - Continuous (TC = 100°C)

    30A
    21.3A
    IDMDrain Current - Pulsed (Note 1)120A
    VGSSGate-Source Voltage± 25V
    EASSingle Pulsed Avalanche Energy (Note 2)280mJ
    IARAvalanche Current (Note 1)30A
    EARRepetitive Avalanche Energy (Note 1)7.9mJ
    dv/dtPeak Diode Recovery dv/dt (Note 3)7.0V/ns
    PD

    Power Dissipation (TC = 25°C)

    - Derate above 25°C

    79W
    0.53W/°C
    TJ, TSTGOperating and Storage Temperature Range-55 to +175°C
    TLMaximum lead temperature for soldering purposes, 1/8" from case for 5 seconds300°C


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