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P4NK60ZFP Power Mosfet Transistor high power mosfet transistors

    Buy cheap P4NK60ZFP Power Mosfet Transistor high power mosfet transistors from wholesalers
     
    Buy cheap P4NK60ZFP Power Mosfet Transistor high power mosfet transistors from wholesalers
    • Buy cheap P4NK60ZFP Power Mosfet Transistor high power mosfet transistors from wholesalers

    P4NK60ZFP Power Mosfet Transistor high power mosfet transistors

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    Brand Name : Anterwell
    Model Number : P4NK60ZFP
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 8760pcs
    Delivery Time : 1 day
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    P4NK60ZFP Power Mosfet Transistor high power mosfet transistors


    Stock Offer (Hot Sell)

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    MAX4663CAE2151MAXIM16+SSOP-16
    MAX472CPA4115MAXIM15+DIP-8
    MAX491CPD+14840MAXIM16+DIP-14

    STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1

    STB4NK60Z-STD4NK60Z-STD4NK60Z-1


    N-CHANNEL600V-1.76Ω-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK

    Zener-Protected SuperMESH™Power MOSFET


    ■ TYPICAL RDS(on) = 1.76 Ω

    ■ EXTREMELY HIGH dv/dt CAPABILITY

    ■ 100% AVALANCHE TESTED

    ■ GATE CHARGE MINIMIZED

    ■ VERY LOW INTRINSIC CAPACITANCES

    ■ VERY GOOD MANUFACTURING REPEATIBILITY


    DESCRIPTION

    The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.


    APPLICATIONS

    ■ HIGH CURRENT, HIGH SPEED SWITCHING

    ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

    ■ LIGHTING


    ABSOLUTE MAXIMUM RATINGS

    SymbolParameterValueUnit

    STP4NK60Z

    STB4NK60Z

    STB4NK60Z-1

    STP4NK60ZFP

    STD4NK60Z

    STD4NK60Z-1

    VDSDrain-source Voltage (VGS = 0)600V
    VDGRDrain-gate Voltage (RGS = 20 kΩ)600V
    VGSGate- source Voltage± 30V
    IDDrain Current (continuous) at TC = 25°C44 (*)4A
    IDDrain Current (continuous) at TC = 100°C2.52.5 (*)2.5A
    IDM (•)Drain Current (pulsed)1616 (*)16A
    PTOTTotal Dissipation at TC = 25°C702570W
    Derating Factor0.560.20.56W/°C
    VESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5KΩ)3000V
    dv/dt (1)Peak Diode Recovery voltage slope4.5V/ns
    VISOInsulation Withstand Voltage (DC)-2500-V

    Tj

    Tstg

    Operating Junction Temperature

    Storage Temperature

    -55 to 150

    -55 to 150

    °C

    (•) Pulse width limited by safe operating area

    (1) ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

    (*) Limited only by maximum temperature allowed



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