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Silicon High voltage general purpose npn transistor Built in damper diode , 2SD1290

    Buy cheap Silicon High voltage general purpose npn transistor Built in damper diode , 2SD1290 from wholesalers
     
    Buy cheap Silicon High voltage general purpose npn transistor Built in damper diode , 2SD1290 from wholesalers
    • Buy cheap Silicon High voltage general purpose npn transistor Built in damper diode , 2SD1290 from wholesalers

    Silicon High voltage general purpose npn transistor Built in damper diode , 2SD1290

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    Brand Name : Anterwell
    Model Number : 2SD1290
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 8000
    Delivery Time : 1 day
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    Silicon High voltage general purpose npn transistor Built in damper diode , 2SD1290


    Silicon High voltage general purpose npn transistor 2SD1290 Built in damper diode


    DESCRIPTION

    ·With TO-3PN package

    ·Built-in damper diode

    ·High voltage ,high reliability

    ·Wide area of safe operation


    APPLICATIONS

    ·For color TV horizontal deflection

    output applications


    PINNING

    PINDESCRIPTION
    1Base
    2

    Collector;connected to mounting base

    3Emitter

    Absolute maximum ratings (Ta=25℃)

    SYMBOLPARAMETERCONDITIONSVALUEUNIT
    VCBOCollector-base voltageOpen emitter1500V
    VEBOEmitter-base voltageOpen collector5V
    ICCollector current (DC)3A
    ICMCollector current (Pulse)10A
    PCCollector power dissipationTC=25℃50W
    TjJunction temperature130
    TstgStorage temperature-55~130

    CHARACTERISTICS Tj=25℃ unless otherwise specified

    SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
    V(BR)EBOEmitter-base breakdown voltageIE=500mA; IC=05V
    VCEsatCollector-emitter saturation voltageIC=2A; IB=0.75A5.0V
    VBEsatBase-emitter saturation voltageIC=2A; IB=0.75A1.5V
    ICBOCollector cut-off current

    VCB=750V; IE=0

    VCB=1500V; IE=0

    50

    1

    μA

    mA

    hFEDC current gainIC=2A ; VCE=10V38
    tsStorage timeIC=2A ILeak=0.75A,LB=5μH37μs
    tfFall time1μs
    VFDiode forward voltageIF=-4A,IB=02.2V

    PACKAGE OUTLINE


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