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T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS

    Buy cheap T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS from wholesalers
     
    Buy cheap T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS from wholesalers
    • Buy cheap T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS from wholesalers
    • Buy cheap T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS from wholesalers

    T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS

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    Brand Name : Anterwell
    Model Number : T410-600B-TR
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 8600pcs
    Delivery Time : 1 day
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    T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS


    T4 Series

    4A TRIACS


    Main Features

    SymbolValueUnit
    IT(RMS)4A
    VDRM/VRRM600 to 800V
    IGT (Q1)5 to 35mA

    DESCRIPTION

    Based on ST’s Snubberless / Logic level technology providing high commutation performances, the T4 series is suitable for use on AC inductive loads.

    They are recommended for applications using universal motors, electrovalves.... such as kitchen aid equipments, power tools, dishwashers,... Available in a fully insulated package, the T4...- ...W version complies with UL standards (ref. E81734).


    Absolute Maximum Ratings

    SymbolParameterValueUnit
    IT(RMS)RMS on-state current (full sine wave)IPAK/DPAK/ TO-220ABTc = 110°C4A
    ISOWATT220ABTc = 105°C
    ITSMNon repetitive surge peak on-state current (full cycle, Tj initial = 25°C)F = 50 Hzt = 20 ms30A
    F = 60 Hzt = 16.7 ms31
    I ² tI² t Value for fusingtp = 10 ms5.1A² s
    dI/dtCritical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 nsF = 120 HzTj = 125°C50A/µs
    IGMPeak gate currenttp = 20 µsTj = 125°C4A
    PG(AV)Average gate power dissipationTj = 125°C1W

    Tstg

    Tj

    Storage junction temperature range

    Operating junction temperature range

    - 40 to + 150

    - 40 to + 125

    °C


    DPAK Package Mechanical Data


    DPAK Foot Print Dimensions (in millimeters)


    ISOWATT220AB Package Mechanical Data


    IPAK Package Mechanical Data


    TO-220AB Package Mechanical Data


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