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2SA970-GR general purpose mosfet Power Mosfet Transistor Low Noise Audio Amplifier Applications

    Buy cheap 2SA970-GR general purpose mosfet Power Mosfet Transistor Low Noise Audio Amplifier Applications from wholesalers
     
    Buy cheap 2SA970-GR general purpose mosfet Power Mosfet Transistor Low Noise Audio Amplifier Applications from wholesalers
    • Buy cheap 2SA970-GR general purpose mosfet Power Mosfet Transistor Low Noise Audio Amplifier Applications from wholesalers

    2SA970-GR general purpose mosfet Power Mosfet Transistor Low Noise Audio Amplifier Applications

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    Brand Name : Anterwell
    Model Number : 2SA970-GR
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 9300pcs
    Delivery Time : 1 day
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    2SA970-GR general purpose mosfet Power Mosfet Transistor Low Noise Audio Amplifier Applications

    TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

    2SA970


    Low Noise Audio Amplifier Applications


    • Low noise : NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 μA, f = 1 kHz

    : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 μA, f = 1 kHz

    • High DC current gain: hFE = 200~700

    • High breakdown voltage: VCEO = −120 V

    • Low pulse noise. Low 1/f noise


    Absolute Maximum Ratings (Ta = 25°C)

    CharacteristicsSymbolRatingUnit
    Collector-base voltageVCBO−120V
    Collector-emitter voltageVCEO−120V
    Emitter-base voltageVEBO−5V
    Collector currentIC−100mA
    Base currentIB−20mA
    Collector power dissipationPC300mW
    Junction temperatureTj125°C
    Storage temperature rangeTstg−55~125°C

    Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


    Weight: 0.21 g (typ.)



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