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VN330SP Integrated Circuit Chip QUAD HIGH SIDE SMART POWER SOLID STATE RELAY

    Buy cheap VN330SP Integrated Circuit Chip QUAD HIGH SIDE SMART POWER SOLID STATE RELAY from wholesalers
     
    Buy cheap VN330SP Integrated Circuit Chip QUAD HIGH SIDE SMART POWER SOLID STATE RELAY from wholesalers
    • Buy cheap VN330SP Integrated Circuit Chip QUAD HIGH SIDE SMART POWER SOLID STATE RELAY from wholesalers

    VN330SP Integrated Circuit Chip QUAD HIGH SIDE SMART POWER SOLID STATE RELAY

    Ask Lasest Price
    Brand Name : Anterwell
    Model Number : VN330SP
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 7600pcs
    Delivery Time : 1 day
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    VN330SP Integrated Circuit Chip QUAD HIGH SIDE SMART POWER SOLID STATE RELAY


    VN330SP

    QUAD HIGH SIDE SMART POWER SOLID STATE RELAY


    TYPEVdemag *RDS(on) *IOUT *VCC
    VN330SPVCC-55V0.32 Ω**0.7 A36 V

    * per Channel

    ** at TJ = 85 ℃


    ■ OUTPUT CURRENT: 0.7A PER CHANNEL

    ■ DIGITAL INPUTS CLAMPED AT 32V MINIMUM VOLTAGE

    ■ SHORTED LOAD AND OVERTEMPERATURE PROTECTIONS

    ■ BUILT-IN CURRENT LIMITER

    ■ UNDER VOLTAGE SHUT DOWN

    ■ OPEN DRAIN DIAGNOSTIC OUTPUT

    ■ FAST DEMAGNETIZATION OF INDUCTIVE LOADS


    DESCRIPTION

    The VN330SP is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving four indipendent resistive or inductive loads with one side connected to ground.

    Active current limitation avoids dropping the system power supply in case of shorted load. Built-in thermal shut-down protects the chip from over temperature and short circuit.

    The open drain diagnostic output indicates short circuit and overtemperatureconditions.


    ABSOLUTE MAXIMUM RATING

    SymbolParameterValueUnit
    VCCPower Supply Voltage45V
    -VCCReverse Supply Voltage-0.3V
    IOUTOutput Current (cont.)Internally LimitedA
    IRReverse Output Current (per channel)-6A
    IINInput Current (per channel)±10mA
    IDIAGDIAG Pin Current±10mA
    VESDElectrostatic Discharge (1.5 kΩ, 100 pF)2000V
    EASSingle Pulse Avalanche Energy per Channel Not Symultaneously (see figure 1)400mJ
    PtotPower Dissipation at Tc ≤ 25 ℃Internally LimitedW
    TjJunction Operating TemperatureInternally Limited
    TstgStorage Temperature-55 to 150

    BLOCK DIAGRAM


    FIGURE 1: Avalanche Energy Test Circit


    FIGURE 2: Peak Short Circuit Current Test Circit


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