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HSMS-286C- TR1G Rectifier Diode Surface Mount Microwave Schottky Detector Diodes

    Buy cheap HSMS-286C- TR1G Rectifier Diode Surface Mount Microwave Schottky Detector Diodes from wholesalers
     
    Buy cheap HSMS-286C- TR1G Rectifier Diode Surface Mount Microwave Schottky Detector Diodes from wholesalers
    • Buy cheap HSMS-286C- TR1G Rectifier Diode Surface Mount Microwave Schottky Detector Diodes from wholesalers

    HSMS-286C- TR1G Rectifier Diode Surface Mount Microwave Schottky Detector Diodes

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    Brand Name : AVAGO
    Model Number : HSMS-286C- TR1G
    Certification : Original Factory Pack
    Price : Negotiation
    Payment Terms : T/T, Western Union,PayPal, Western Union
    Supply Ability : 5200PCS
    Delivery Time : 1 Day
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    HSMS-286C- TR1G Rectifier Diode Surface Mount Microwave Schottky Detector Diodes

    Features

    • Surface Mount SOT-23/SOT‑143 Packages

    • Miniature SOT-323 and SOT‑363 Packages

    • High Detection Sensitivity:

    up to 50 mV/µW at 915 MHz

    up to 35 mV/µW at 2.45 GHz

    up to 25 mV/µW at 5.80 GHz

    • Low FIT (Failure in Time) Rate*

    • Tape and Reel Options Available

    • Unique Configurations in Surface Mount SOT-363 Package

    – increase flexibility

    – save board space

    – reduce cost

    • HSMS-286K Grounded Center Leads Provide up to 10 dB Higher Isolation

    • Matched Diodes for Consistent Performance

    • Better Thermal Conductivity for Higher Power Dissipation

    • Lead-free


    Description

    Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optimized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling.


    Available in various package configurations, this family of detector diodes provides low cost solutions to a wide variety of design problems. Avago’s manufacturing techniques assure that when two or more diodes are mounted into a single surface mount package, they are taken from adjacent sites on the wafer, assuring the highest possible degree of match.


    Absolute Maximum Ratings, TC = +25°C, Single Diode

    SymbolParameterUnitSOT-23/143SOT-323/363
    PIVPeak Inverse VoltageV2.02.0
    TJJunction Temperature°C150150
    TSTGStorage Temperature°C-65 to 150-65 to 150
    TOPOperating Temperature°C-65 to 150-65 to 150
    θjcThermal Resistance[2]°C/W500150


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