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TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor

    Buy cheap TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor from wholesalers
     
    Buy cheap TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor from wholesalers
    • Buy cheap TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor from wholesalers

    TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor

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    Brand Name : Anterwell
    Model Number : TLP734
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 6800pcs
    Delivery Time : 1 day
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    TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor


    TOSHIBA Photocoupler GaAs Ired&Photo−Transistor

    TLP733, TLP734


    Office Machine

    Household Use Equipment

    Solid State Relay

    Switching Power Supply


    The TOSHIBA TLP733 and TLP734 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP.

    TLP734 is no−base internal connection for high−EMI environments.


    • Collector−emitter voltage: 55 V (min.)
    • Current transfer ratio: 50% (min.)
      • Rank GB: 100% (min.)
    • UL recognized: UL1577, file no. E67349
    • BSI approved: BS EN60065: 1994
      • Certificate no. 7364
      • BS EN60950: 1992
      • Certificate no. 7365
    • SEMKO approved: SS4330784
      • Certificate no. 9325163, 9522142
    • Isolation voltage: 4000 Vrms (min.)
    • Option (D4) type
      • VDE approved: DIN VDE0884 / 06.92,
        • Certificate no. 74286, 91808
      • Maximum operating insulation voltage: 630, 890 VPK
      • Highest permissible over voltage: 6000, 8000 VPK

    (Note) When a VDE0884 approved type is needed, please designate the “Option (D4)”


    7.62 mm pich 10.16 mm pich

    standard type TLP×××F type

    Creepage distance : 7.0 mm (min.) 8.0 mm (min.)

    Clearance : 7.0 mm (min.) 8.0 mm (min.)

    Internal creepage path : 4.0 mm (min.) 4.0 mm (min.)

    Insulation thickness : 0.5 mm (min.) 0.5 mm (min.)


    Maximum Ratings (Ta = 25°C)

    CharacteristicSymbolRatingUnit
    LEDForward currentIF60mA
    Forward current derating (Ta ≥ 39°C)∆IF / °C-0.7mA / °C
    Peak forward current (100 µs pulse, 100 pps)IFP1A
    Reverse voltageVR5V
    Junction temperatureTj125°C
    DetectorCollectoremitter voltageVCEO55V
    Collectorbase voltage (TLP733)VCBO80V
    Emittercollector voltageVECO7V
    Emitterbase voltage (TLP733)VEBO7V
    Collector currentIC50mA
    Power dissipationPC150mW
    Power dissipation derating (Ta ≥ 25°C)∆PC / °C-1.5mW / °C
    Junction temperatureTj125°C
    Storage temperature rangeTstg-55~125°C
    Operating temperature rangeTopr-40~100°C
    Lead soldering temperature (10 s)Tsol260°C
    Total package power dissipationPT250mW
    Total package power dissipation derating (Ta ≥ 25°C)∆PT / °C-2.5mW / °C
    Isolation voltage (AC, 1 min., R.H.≤ 60%)BVS4000Vrms

    Weight: 0.42 g

    Pin Configurations (top view)


    TLP733

    1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Base


    TLP734

    1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Nc


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