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Silicon N Channel MOS Type Switching Regulator Power Mosfet Transistor 2SK3568

    Buy cheap Silicon N Channel MOS Type Switching Regulator Power Mosfet Transistor 2SK3568 from wholesalers
     
    Buy cheap Silicon N Channel MOS Type Switching Regulator Power Mosfet Transistor 2SK3568 from wholesalers
    • Buy cheap Silicon N Channel MOS Type Switching Regulator Power Mosfet Transistor 2SK3568 from wholesalers

    Silicon N Channel MOS Type Switching Regulator Power Mosfet Transistor 2SK3568

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    Brand Name : Anterwell
    Model Number : 2SK3568
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 10000pcs
    Delivery Time : 1 day
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    Silicon N Channel MOS Type Switching Regulator Power Mosfet Transistor 2SK3568


    TOSHIBA Field Effect Transistor

    Silicon N Channel MOS Type (π-MOSVI) 2SK3568


    Switching Regulator Applications

    • Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.)

    • High forward transfer admittance: |Yfs| = 8.5S (typ.)

    • Low leakage current: IDSS = 100 μA (VDS = 500 V)

    • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


    Weight : 1.7 g (typ.)


    Absolute Maximum Ratings (Ta = 25°C)

    CharacteristicsSymbolRatingUnit
    Drain−source voltageVDSS900V
    Drain−gate voltage (RGS = 20 kΩ)VDGR900V
    Gate−source voltageVGSS±30V
    Drain currentDC (Note 1)ID9A
    Pulse (Note 1)IDP27A
    Drain power dissipation (Tc = 25°C)PD150W
    Single pulse avalanche energy (Note 2)EAS663mJ
    Avalanche currentIAR9A
    Repetitive avalanche energy (Note 3)EAR15mJ
    Channel temperatureTch150°C
    Storage temperature rangeTstg−55~150°C

    Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


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