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IR2011S 35ns Low Side Driver , High Speed Power Mosfet Driver 10V - 20V

    Buy cheap IR2011S 35ns Low Side Driver , High Speed Power Mosfet Driver 10V - 20V from wholesalers
     
    Buy cheap IR2011S 35ns Low Side Driver , High Speed Power Mosfet Driver 10V - 20V from wholesalers
    • Buy cheap IR2011S 35ns Low Side Driver , High Speed Power Mosfet Driver 10V - 20V from wholesalers
    • Buy cheap IR2011S 35ns Low Side Driver , High Speed Power Mosfet Driver 10V - 20V from wholesalers

    IR2011S 35ns Low Side Driver , High Speed Power Mosfet Driver 10V - 20V

    Ask Lasest Price
    Brand Name : IR
    Model Number : IR2011STRPBF
    Price : Negotiation
    Payment Terms : T/T, Western Union , ESCROW
    Supply Ability : 50000PCS
    Delivery Time : STOCK
    • Product Details
    • Company Profile

    IR2011S 35ns Low Side Driver , High Speed Power Mosfet Driver 10V - 20V

    IR2011STRPBF Computer IC Chip HIGH AND LOW SIDE DRIVER high speed powerMOSFET driver


    Features


    ·Floating channel designed for bootstrap operation Fully operational up to +200V Tolerant to negative transient voltage, dV/dt immune

    ·Gate drive supply range from 10V to 20V

    ·Independent low and high side channels

    ·Input logicHIN/LIN active high

    ·Undervoltage lockout for both channels

    ·3.3V and 5V input logic compatible

    ·CMOS Schmitt-triggered inputs with pull-down

    ·Matched propagation delay for both channels ·Also available LEAD-FREE (PbF)


    Applications


    ·Audio Class D amplifiers ·High power DC-DC SMPS converters

    ·Other high frequency applications


    Description

    The IR2011 isa high power, high speed powerMOSFET driver with independenthigh and low side referenced output channels, idealforAudio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Propri- etary HVIC and latch immune CMOS technologies enable ruggedized monolithic con- struction.


    Product AttributesSelect All
    CategoriesIntegrated Circuits (ICs)
    Series-
    PackagingTape & Reel (TR)
    Part StatusActive
    Driven ConfigurationHalf-Bridge
    Channel TypeIndependent
    Number of Drivers2
    Gate TypeN-Channel MOSFET
    Voltage - Supply10 V ~ 20 V
    Logic Voltage - VIL, VIH0.7V, 2.2V
    Current - Peak Output (Source, Sink)1A, 1A
    Input TypeInverting
    High Side Voltage - Max (Bootstrap)200V
    Rise / Fall Time (Typ)35ns, 20ns
    Operating Temperature-40°C ~ 150°C (TJ)
    Mounting TypeSurface Mount
    Package / Case8-SOIC (0.154", 3.90mm Width)
    Supplier Device Package8-SOIC
    Base Part NumberIR2011SPBF


    Deli electronics tehcnology co ltd
    www.icmemorychip.com
    Email:sales3@deli-ic.com
    Skype:hkdeli881
    TEL:86-755-82539981


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