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GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel

    Buy cheap GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel from wholesalers
     
    Buy cheap GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel from wholesalers
    • Buy cheap GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel from wholesalers
    • Buy cheap GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel from wholesalers

    GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel

    Ask Lasest Price
    Brand Name : TOSHIBA
    Model Number : GT20J101
    Price : Negotiation
    Payment Terms : T/T, Western Union , ESCROW
    Supply Ability : 10000PCS
    Delivery Time : STOCK
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    GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel

    GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT


    High Power Switching Applications


    • The 3rd Generation • Enhancement-Mode

    • High Speed: tf = 0.30 µs (max)

    • Low Saturation Voltage: VCE (sat) = 2.7 V (max)


    CharacteristicSymbolRatingUnit
    Collector-emitter voltageVCES600V
    Gate-emitter voltageVGES+-20V
    Collector current DCIC20A
    Collector current 1 msICP40A
    Collector power dissipation (Tc = 25°C)PC130W
    Junction temperatureTj150°C
    Storage temperature rangeTstg−55~150°C


    Deli electronics tehcnology co ltd
    www.icmemorychip.com
    Email:sales3@deli-ic.com
    Skype:hkdeli881
    TEL:86-755-82539981


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