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BSH201 NPN PNP Transistors P Channel 60V 300mA ( Ta ) 417mW ( Ta ) Surface Mount

    Buy cheap BSH201 NPN PNP Transistors P Channel 60V 300mA ( Ta ) 417mW ( Ta ) Surface Mount from wholesalers
     
    Buy cheap BSH201 NPN PNP Transistors P Channel 60V 300mA ( Ta ) 417mW ( Ta ) Surface Mount from wholesalers
    • Buy cheap BSH201 NPN PNP Transistors P Channel 60V 300mA ( Ta ) 417mW ( Ta ) Surface Mount from wholesalers
    • Buy cheap BSH201 NPN PNP Transistors P Channel 60V 300mA ( Ta ) 417mW ( Ta ) Surface Mount from wholesalers

    BSH201 NPN PNP Transistors P Channel 60V 300mA ( Ta ) 417mW ( Ta ) Surface Mount

    Ask Lasest Price
    Brand Name : NXP
    Model Number : BSH201
    Price : Negotiation
    Payment Terms : T/T, Western Union , ESCROW
    Supply Ability : 30000PCS
    Delivery Time : STOCK
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    BSH201 NPN PNP Transistors P Channel 60V 300mA ( Ta ) 417mW ( Ta ) Surface Mount


    BSH201 NPN PNP Transistors P-Channel 60V 300mA (Ta) 417mW (Ta) Surface Mount


    P-channel enhancement mode BSH201 MOS transistor


    FEATURES SYMBOL QUICK REFERENCE DATA • Low threshold voltage VDS = -60 V • Fast switching • Logic level compatible ID = -0.3 A • Subminiature surface mount package RDS(ON) ≤ 2.5 Ω (VGS = -10 V)
    GENERAL DESCRIPTION PINNING SOT23
    P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This device has low 1 gate threshold voltage and extremely fast switching making it ideal for 2 source battery powered applications and high speed digital interfacing. 3 drain
    The BSH201 is supplied in the SOT23 subminiature surface mounting package.


    Product AttributesSelect All
    CategoriesDiscrete Semiconductor Products
     Transistors - FETs, MOSFETs - Single
    ManufacturerNexperia USA Inc.
    Series-
    PackagingTape & Reel (TR)
    Part StatusActive
    FET TypeP-Channel
    TechnologyMOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)60V
    Current - Continuous Drain (Id) @ 25°C300mA (Ta)
    Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
    Rds On (Max) @ Id, Vgs2.5 Ohm @ 160mA, 10V
    Vgs(th) (Max) @ Id1V @ 1mA (Min)
    Gate Charge (Qg) (Max) @ Vgs3nC @ 10V
    Vgs (Max)±20V
    Input Capacitance (Ciss) (Max) @ Vds70pF @ 48V
    FET Feature-
    Power Dissipation (Max)417mW (Ta)
    Operating Temperature-55°C ~ 150°C (TJ)
    Mounting TypeSurface Mount
    Supplier Device PackageTO-236AB


    Deli electronics tehcnology co ltd
    www.icmemorychip.com

    Email:sales3@deli-ic.com
    Skype:hkdeli881
    TEL:86-0755-82539981

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