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FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F

    Buy cheap FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F from wholesalers
     
    Buy cheap FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F from wholesalers
    • Buy cheap FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F from wholesalers
    • Buy cheap FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F from wholesalers

    FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F

    Ask Lasest Price
    Brand Name : FSC
    Model Number : FDPF10N60NZ
    Price : Negotiation
    Payment Terms : T/T, Western Union , ESCROW
    Supply Ability : 10000pcs
    Delivery Time : STOCK
    • Product Details
    • Company Profile

    FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F

    FDPF10N60NZ NPN PNP Transistors N-Channel 600V 10A (Tc) 38W (Tc) Through Hole TO-220F


    N-Channel MOSFET 600V, 10A, 0.75
    Features
    •RDS(on) = 0.64 ( Typ.)@ VGS = 10V, ID = 5A
    • Low Gate Charge ( Typ. 23nC)
    • Low Crss ( Typ. 10pF)
    • Fast Switching
    • 100% Avalanche Tested
    • Improved dv/dt Capability
    • ESD Improved Capability
    • RoHS compliant

    Description
    These N-Channel enhancement mode power field effect
    transistors are produced using Fairchild’s proprietary, planar
    stripe, DMOS technology.
    This advanced technology has been especially tailored to minimize
    on-state resistance, provide superior switching
    performance, and withstand high energy pulse in the avalanche
    and commutation mode. These devices are well suited for high
    efficient switched mode power supplies and active power factor
    correction

    EU RoHS
    Compliant with Exemption
    ECCN (US)EAR99
    Product CategoryPower MOSFET
    ConfigurationSingle
    Process TechnologyUniFET II
    Channel ModeEnhancement
    Channel TypeN
    Number of Elements per Chip1
    Maximum Drain Source Voltage (V)600
    Maximum Gate Source Voltage (V)±25
    Maximum Gate Threshold Voltage (V)5
    Maximum Continuous Drain Current (A)10
    Maximum Gate Source Leakage Current (nA)10000
    Maximum IDSS (uA)1
    Maximum Drain Source Resistance (mOhm)750@10V
    Typical Gate Charge @ Vgs (nC)23@10V
    Typical Gate Charge @ 10V (nC)23
    Typical Input Capacitance @ Vds (pF)1110@25V
    Maximum Power Dissipation (mW)38000
    Typical Fall Time (ns)50
    Typical Rise Time (ns)50
    Typical Turn-Off Delay Time (ns)70
    Typical Turn-On Delay Time (ns)25
    Minimum Operating Temperature (°C)-55
    Maximum Operating Temperature (°C)150
    PackagingTube
    Supplier PackageTO-220FP
    Standard Package NameTO-220
    Pin Count3
    MountingThrough Hole
    Package Height15.87
    Package Length10.16
    Package Width4.7
    PCB changed3
    TabTab
    Lead ShapeThrough Hole


    Deli electronics tehcnology co ltd
    www.icmemorychip.com

    Email:sales3@deli-ic.com
    Skype:hkdeli881
    TEL:86-0755-82539981


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