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2MBI100N 060 Power Switching IGBT Power Module Low Saturation Voltage

    Buy cheap 2MBI100N 060 Power Switching IGBT Power Module  Low Saturation Voltage from wholesalers
     
    Buy cheap 2MBI100N 060 Power Switching IGBT Power Module  Low Saturation Voltage from wholesalers
    • Buy cheap 2MBI100N 060 Power Switching IGBT Power Module  Low Saturation Voltage from wholesalers
    • Buy cheap 2MBI100N 060 Power Switching IGBT Power Module  Low Saturation Voltage from wholesalers
    • Buy cheap 2MBI100N 060 Power Switching IGBT Power Module  Low Saturation Voltage from wholesalers

    2MBI100N 060 Power Switching IGBT Power Module Low Saturation Voltage

    Ask Lasest Price
    Brand Name : FUJI
    Model Number : 2MBI100N-060
    Price : Negotiation
    Payment Terms : T/T, Western Union , ESCROW
    Supply Ability : 500PCS
    Delivery Time : STOCK
    • Product Details
    • Company Profile

    2MBI100N 060 Power Switching IGBT Power Module Low Saturation Voltage

    2MBI100N-060 IGBT Power Module 2-PACK IGBT 600V 100A

    IGBT MODULE ( N series )

    n
    n Features
    • Square RBSOA
    • Low Saturation Voltage
    • Less Total Power Dissipation
    • Improved FWD Characteristic
    • Minimized Internal Stray Inductance
    • Overcurrent Limiting Function (
    ~3 Times Rated Current)
    n
    n Applications
    • High Power Switching
    • A.C. Motor Controls
    • D.C. Motor Controls
    • Uninterruptible Power Supply

    Description1. IGBT is a functional integration of Power MOSFET and BJT devices in monolithic form
    2. IGBT combines the best attributes of both to achieve optimal device characteristics. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.
    3. All componentsand interconnects are isolated from the heat sinking baseplate,offering simplified system assembly.
    Feature1). Square RBSOA
    2). Low Saturation Voltage
    3). Overcurrent Limiting Function (~3 Times Rated Current)
    4). IGBT is three-terminal power semiconductor device
    5). High Frequency Operation
    Application1). AC Drive inverter
    2). Servo control
    3). UPS, Uninterruptible Power Supply
    4). Welding Power Supplies

    n Maximum Ratings and Characteristics
    • Absolute Maximum Ratings ( Tc=25°C)
    Items Symbols Ratings Units
    Collector-Emitter Voltage VCES 600V
    Gate -Emitter Voltage VGES ± 20V
    Continuous IC 100
    Collector 1ms
    IC PULSE 200
    Current Continuous -IC 100 1ms
    -IC PULSE 200
    Max. Power Dissipation PC 400W
    Operating Temperature Tj +150 °C
    Storage Temperature Tstg -40∼ +125°C
    Isolation VoltageA.C. 1min.Vis 2500V
    Mounting *13.5
    Terminals *13.5
    Note: *1:Recommendable Value; 2.5∼ 3.5 Nm (M



    Deli electronics tehcnology co ltd
    www.icmemorychip.com

    Email:sales3@deli-ic.com
    Skype:hkdeli881
    Website:www.deli-ic.com
    TEL:86-0755-82539981


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