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1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series

    Buy cheap 1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series from wholesalers
     
    Buy cheap 1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series from wholesalers
    • Buy cheap 1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series from wholesalers

    1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series

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    Brand Name : Infineon
    Model Number : FF200R12KT4
    Payment Terms : T/T
    Supply Ability : 1000sets
    Delivery Time : 25 days after signing the contract
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    1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series

    half-bridge 62mm C-series 1200 V, inverter dual IGBT modules FF200R12KT4 power drive module


    Maximum Rated Values

    Collector-emitter voltageTvj = 25°CVCES1200V
    Continuous DC collector currentTC = 100°C, Tvj max = 175°C
    TC = 25°C, Tvj max = 175°C    		IC nom
    IC

    200

    320

    A

    A

    Repetitive peak collector currenttP = 1 msICRM400A
    Total power dissipation

    TC = 25°C,

    Tvj max = 175°C

    		Ptot1100W
    Gate-emitter peak voltageVGES+/-20V

    Characteristic Values

    Collector-emitter saturation voltage

    IC = 200 A, VGE = 15 V Tvj = 25°C

    IC = 200 A, VGE = 15 V Tvj = 125°C
    IC = 200 A, VGE = 15 V Tvj = 150°C

    		VCE sat1,75
    2,05
    2,10    		2,15V
    VV
    Gate threshold voltageIC = 7,60 mA, VCE = VGE, Tvj = 25°CVGEth5,25,86,4V
    Gate chargeVGE = -15 V ... +15 VQG1,80µC
    Internal gate resistorTvj = 25°CRGint3,8Ω
    Input capacitancef = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 VCies14,0nF
    Reverse transfer capacitancef = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 VCres0,50nF
    Collector-emitter cut-off currentVCE = 1200 V, VGE = 0 V, Tvj = 25°CICES5,0mA
    Gate-emitter leakage currentVCE = 0 V, VGE = 20 V, Tvj = 25°CIGES400nA
    Turn-on delay time, inductive loadIC = 200 A, VCE = 600 V Tvj = 25°C
    VGE = ±15 V Tvj = 125°C
    RGon = 2,4 Ω Tvj = 150°C    		td on0,16 0,17
    0,18    		µs
    µs
    µs
    Rise time, inductive loadIC = 200 A, VCE = 600 V Tvj = 25°C
    VGE = ±15 V Tvj = 125°C
    RGon = 2,4 Ω Tvj = 150°C    		tr0,045 0,04
    0,50    		µs
    µs
    µs
    Turn-off delay time, inductive loadIC = 200 A, VCE = 600 V Tvj = 25°C
    VGE = ±15 V Tvj = 125°C
    RGon = 2,4 Ω Tvj = 150°C    		td off0,45 0,52
    0,54    		µs
    µs
    µs
    Fall time, inductive loadIC = 200 A, VCE = 600 V Tvj = 25°C
    VGE = ±15 V Tvj = 125°C
    RGon = 2,4 Ω Tvj = 150°C    		tf0,10 0,16
    0,16    		µs
    µs
    µs
    Turn-on energy loss per pulseIC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25°C
    VGE = ±15 V, di/dt = 4000 A/µs (Tvj = 150°C) Tvj = 125°C
    RGon = 2,4 Ω Tvj = 150°C    		Eon10,0
    15,0
    17,0    		19,0
    30,0
    36,0
    Turn-off energy loss per pulseIC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25°C
    VGE = ±15 V, du/dt = 4500 V/µs (Tvj = 150°C) Tvj = 125°C
    RGoff = 2,4 Ω Tvj = 150°C    		Eoff14,0
    20,0
    23,0    		mJ
    mJ
    mJ
    SC dataVGE ≤ 15 V, VCC = 900 V
    VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 150°C    		ISC800mJ
    mJ
    mJ
    Thermal resistance, junction to caseIGBT / per IGBTRthJC0,135K/W
    Thermal resistance, caseto heatsinkEACH IGBT / per IGBT
    λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)    		RthCH0,034K/W
    Temperature under switching conditionsTvj op-40150

    °C




    Product Tags:

    high power igbt module

      

    automotive igbt

      
    Quality 1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series for sale

    1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series

    Company Info.
    Hontai Machinery and equipment (HK) Co. ltd
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