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IRF2907ZS-7PPBF Power Mosfet IC Transistor HEXFET® Power MOSFET

    Buy cheap IRF2907ZS-7PPBF Power Mosfet IC Transistor HEXFET® Power MOSFET from wholesalers
     
    Buy cheap IRF2907ZS-7PPBF Power Mosfet IC Transistor HEXFET® Power MOSFET from wholesalers
    • Buy cheap IRF2907ZS-7PPBF Power Mosfet IC Transistor HEXFET® Power MOSFET from wholesalers

    IRF2907ZS-7PPBF Power Mosfet IC Transistor HEXFET® Power MOSFET

    Ask Lasest Price
    Brand Name : Anterwell
    Model Number : IRF2907ZS-7PPBF
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 8500pcs
    Delivery Time : 1 day
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    IRF2907ZS-7PPBF Power Mosfet IC Transistor HEXFET® Power MOSFET


    IRF2907ZS-7PPbF

    HEXFET® Power MOSFET


    Features

    • Advanced Process Technology

    • Ultra Low On-Resistance

    • 175°C Operating Temperature

    • Fast Switching

    • Repetitive Avalanche Allowed up to Tjmax


    Description

    Specifically designed for high current, high reliability applications, this HEXFET® Power MOSFET utilizes the latest processing techniques and advanced packaging technology to achieve extremely low on-resistance and world -class current ratings. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Server & Telecom OR'ing, Automotive and low voltage Motor Drive Applications.



    Absolute Maximum Ratings

    ParameterMaxUnits
    ID @ TC = 25°CContinuous Drain Current, VGS @ 10V (Silicon Limited)180A
    ID @ TC = 100°CContinuous Drain Current, VGS @ 10V (See Fig. 9)120A
    ID @ TC = 25°CContinuous Drain Current, VGS @ 10V (Package Limited)160A
    IDMPulsed Drain Current700A
    PD @TC = 25°CMaximum Power Dissipation300W
    Linear Derating Factor2.0W/°C
    VGSGate-to-Source Voltage± 20V
    EASSingle Pulse Avalanche Energy (Thermally Limited)160mJ
    EAS (tested)Single Pulse Avalanche Energy Tested Value410mJ
    IARAvalanche CurrentSee Fig.12a,12b,15,16A
    EARRepetitive Avalanche EnergymJ
    TJ , TSTGOperating Junction and Storage Temperature Range-55 to + 175°C
    Soldering Temperature, for 10 seconds300 (1.6mm from case )°C
    Mounting torque, 6-32 or M3 screw10 lbf•in (1.1N•m)°C

    Stock Offer (Hot Sell)

    Part No.QuantityBrandD/CPackage
    M25P80-VMN6TP50000MICRONNEWSOP8
    MT29C8G96MAZBBDKD-48 IT12000MICRONNEWBGA
    MT46H64M16LFBF-5 IT:B10000MICRONNEWBGA
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    MT41K64M16TW-107 IT:J10000MICRONNEWFBGA
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    M25PE16-VMW6TG50000MICRONNEWSOP8
    MT48LC8M16A2P-6A IT:L20000MICRONNEWTSOP
    MT29F128G08CFABBWP-12IT:B4000MICRONNEWBGA
    M25P10-AVMN6TP50000MICRONNEWSOP8
    MT46H64M32LFBQ-48 IT:C6000MICRONNEWBGA
    MT47H64M16NF-25E AIT:M10000MICRONNEWBGA
    MT29F512G08CKECBH7-12:C1000MICRONNEWBGA
    MT46H64M32LFCX-5 IT:B8000MICRONNEWFBGA
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    M29W160EB70N6E30000MICRONNEWTSOP-48
    PC28F512P30EFB4000MICRONNEWBGA
    N25Q00AA13GSF40G4000MICRONNEWSOP
    MT29F1G16ABBDAHC-IT:D14000MICRONNEWBGA
    MT29TZZZ8D5JKEZB-107 W:95Q10000MICRONNEWBGA
    MT47H64M16NF-25E:M30000MICRONNEWBGA
    MT40A512M16JY-083E:B10000MICRONNEWBGA
    MT47H64M16NF-25E IT:M30000MICRONNEWFBGA
    MT29E2T08CUHBBM4-3R:B2000MICRONNEWBGA
    MT46V16M16P-5B:M30000MICRONNEWTSOP

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