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Aluminium Oxide Ceramic Substrates

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    Aluminium Oxide Ceramic Substrates

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    Brand Name : ZG
    Model Number : MS
    Certification : CE
    Price : 10USD/PC
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 1000 PCS
    Delivery Time : 5-8 work days
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    Aluminium Oxide Ceramic Substrates

    Aluminium oxide ceramic substrates

    Ceramic substrates made of aluminum oxide Al2O3 are the basis for the creation of hybrid integrated circuits, ceramic capacitors, resistors, heaters, various semiconductor elements and electrical products.


    The raw material for the production of vacuum-tight ceramics Al2O3 is corundum, so ceramics are often called not only "aluminum oxide", but also corundum ceramics. Vacuum-tight corundum ceramics are resistant to various acids and other aggressive media, and are an excellent durable insulator. Substrates made of Al2O3 do not lose their performance in case of sudden temperature changes.


    An important role is played by the percentage of aluminum oxide in the total volume and its crystal lattice. They determine its future performance characteristics, such as thermal conductivity, hardness, bending strength, coefficient of specific expansion and others.

    Specifications

    Properties

    Materials

    Al2O3 94,4%

    (ВК-94ДН)

    Al2O3 96,0%

    (ВК-96ДН)

    Al2O3 99,6%

    (ВК-100ДН)

    Colour

    pink

    white

    white

    Bulk density

    г/см3

    3,60

    3,70

    3,90

    Surface roughness, Ra

    (grinding)

    мкм

    -

    0,2-0,7

    0,1

    Surface roughness Ra (polished)

    мкм

    -

    ≤ 0,03

    ≤ 0,05

    Mechanical properties

    Flexural strength

    МПа

    280

    350

    500

    Compressive strength

    МПа



    450

    Elastic modulus

    ГПа

    -

    330

    330

    Vickers hardness

    ГПа

    -

    14

    16

    Fracture toughness


    -

    -

    -


    Physical properties

    Coefficient of thermal expansion (40-300°C)

    10 -6 /°C

    6,5 - 7,5

    6,5 ~ 7,5

    6,2 ~ 7,2

    Coefficient of thermal expansion (300-800 С)



    6,5 ~ 8,0

    6,5 ~ 8,2

    Thermal conductivity (25°C)

    Вт/м∙°K

    15 - 20

    ≥ 24

    ≥ 30

    Specific heat capacity

    Дж/Кг∙°К

    -

    750

    750

    Dielectric strength



    ≥ 17

    ≥ 15

    Volumetric resistance(25 С)



    ≥ 1014

    ≥ 1014

    Dielectric constant (1 МГц)

    -

    9,0 - 10,0

    9 ~ 10

    10

    Dielectric losses (1МГц, 25°C)

    ∙10 -4

    4

    2

    2

    Sizes

    Distance between scribing lines, мм



    1±0,05

    1±0,05

    Minimum hole diameter, мм



    0,1±0,05

    0,1±0,05

    Thickness, мм



    0,2 ~ 2,0

    ≤ 0,635

    Thickness tolerance (min), мм



    ± 0,03

    ± 0,04

    Dimensions (max), мм



    139,7 x 190,5

    120 x 120

    Dimensional tolerance (min), мм



    (+0,15 / -0,05)

    ±0,1; ±2

    Metallisation

    DBC technology

    +

    +

    -

    Thick-film technology

    +

    +

    +

    Thin-film technology

    +

    +

    +

    Application area

    • power electronics, converter equipment (radio communication devices, broadcasting equipment, medical electrical equipment, etc.);
    • insulation gaskets for heat removal from electronic components to the cooling radiator;
    • protectors for elements of piezoelectric converters;
    • auto electronics (multiplicated boards for resistors, rheostats, fuel level sensors, pressure sensors, LED headlights, electric power steering, ABS, ASR systems, etc.)
    • precision substrates for microwave GIS and microassemblies with a high density of holes and recesses for crystals;
    • carriers of sensor circuits of toxic substances, ionizing radiation, magnetic field, etc.;
    • semiconductor industry (thermoelectric modules and heat removal devices, analytical equipment, wireless power sources, energy-efficient waste heat disposal systems, electronical, laser and optical systems, LEDs (energy-saving technologies), IGBT modules
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