4inch Silicon Carbide Wafers 4H-N Type 350um Thickness SiC Substrate

4inch Silicon Carbide Wafers 4H-N Type 350um Thickness SiC Substrate

Introduction of 4inch Silicon Carbide Wafers:

The 4-inch SiC (silicon carbide) wafer market is an emerging segment in the semiconductor industry, driven by the growing demand for high-performance materials across various applications. SiC wafers are renowned for their excellent thermal conductivity, high electric field strength, and outstanding energy efficiency. These characteristics make them highly suitable for use in power electronics, automotive applications, and renewable energy technologies.The 4-inch 4H-N type SiC wafer is a high-quality conductive silicon carbide substrate based on the 4H polytype crystal structure. Featuring a wide bandgap, high breakdown electric field, excellent thermal conductivity, and high electron mobility, it is ideal for manufacturing high-voltage, high-frequency, and high-temperature power devices, such as MOSFETs, Schottky diodes, JFETs, and IGBTs. It is widely used in new energy systems, electric vehicles, smart grids, 5G communication, and aerospace applications.

Key Advantages of 4inch Silicon Carbide Wafers:

High Breakdown Voltage – Up to 10× that of silicon, ideal for high-voltage devices.

Low On-Resistance – High electron mobility enables faster switching and lower losses.

Excellent Thermal Conductivity – About 3× higher than silicon, ensuring device reliability under heavy load.

High Temperature Operation – Stable performance beyond 600°C.

Superior Crystal Quality – Low micropipe and dislocation density, excellent surface for epitaxial growth.

Customizable Options – Available with tailored doping, thickness, and surface finish for specific device processes.

Parameters of ZMSH SiC Wafers and Product Recommendation:

6-Inch Silicon Carbide (SiC) Wafer for AR glasses MOS SBD for reference

Applications of Silicon Carbide Wafers:

Silicon carbide (SiC) wafer is one of the third-generation semiconductor materials, characterized by high power capability, low energy loss, high reliability, and low heat generation. It can be used in high-voltage and harsh environments exceeding 1200 volts, and is widely applied in wind power systems, railway and large transportation equipment, as well as solar inverters, uninterruptible power supplies (UPS), smart grids, and other high-power electronic applications.

Electric Vehicles (EVs): For traction inverters, onboard chargers, and DC-DC converters.

Renewable Energy: Inverters for solar panels and wind turbines.

Industrial Systems: Motor drives and high-power equipment.

Aerospace and Defense: High-efficiency power systems in harsh environments.

Q&A:

Q:What is the difference between Si and SiC wafer?

A:Silicon (Si) and Silicon Carbide (SiC) wafers are both used in semiconductor manufacturing, but they have very different physical, electrical, and thermal properties that make them suitable for different types of devices. ilicon wafers are ideal for standard, low-power electronics like integrated circuits and sensors.

Silicon carbide wafers are used for high-voltage, high-temperature, and high-efficiency power devices, such as those in electric vehicles, solar inverters, and industrial power systems.

Q:Which is better, SiC or GaN?

A: SiC is best for high-voltage, high-power, and high-temperature applications such as EVs, renewable energy, and industrial systems.GaN is best for high-frequency, low-to-medium voltage applications such as fast chargers, RF amplifiers, and communication devices.In fact, GaN-on-SiC technology combines the strengths of both — GaN’s speed + SiC’s thermal performance — and is widely used in 5G and radar systems.

Q:Is SiC a ceramic?

A: Yes, silicon carbide (SiC) is a ceramic — but it’s also a semiconductor.