4inch 4H/6H P Type Silicon Carbide Wafer 350um Thickness SiC
Substrate
What is P-type SiC wafer?
A P-type silicon carbide (SiC) wafer is a semiconductor substrate
that is doped with impurities to create a P-type (positive)
conductivity. Silicon carbide is a wide-bandgap semiconductor
material that offers exceptional electrical and thermal properties,
making it suitable for high-power and high-temperature electronic
devices.
In the context of SiC wafers, "P-type" refers to the type of doping
used to modify the conductivity of the material. Doping involves
intentionally introducing impurities into the crystal structure of
the semiconductor to alter its electrical properties. In the case
of P-type doping, elements with fewer valence electrons than
silicon (the base material for SiC) are introduced, such as
aluminum or boron. These impurities create "holes" in the crystal
lattice, which can act as charge carriers, resulting in a P-type
conductivity.
P- type SiC wafers are essential for fabricating various electronic
components, including power devices like metal-oxide-semiconductor
field-effect transistors (MOSFETs), Schottky diodes, and bipolar
junction transistors (BJTs). They are typically grown using
advanced epitaxial growth techniques and are further processed to
create specific device structures and features required for
different applications.
Key advantages of P-type SiC wafers:
High-temperature performance: P-type SiC can operate reliably at temperatures up to 350 and
beyond, unlike conventional silicon, making it suitable for
demanding applications.
Excellent thermal and electrical conductivity: SiC's superior thermal conductivity allows for better heat
dissipation, while its electrical properties lead to more efficient
conduction and lower power loss.
High power handling: SiC wafers are used to manufacture high-voltage power devices such
as MOSFETs and BJTs, enabling them to handle higher voltages more
efficiently.
Fast switching speeds: The material's properties enable faster switching speeds in power
electronic devices, which increases efficiency and allows for
device miniaturization.
Durability: The robust crystalline structure of SiC resists degradation,
ensuring device longevity and reliability even in harsh operating
conditions, including high radiation and corrosive environments.
Improved reliability: The unique SiC lattice structure reduces defect formation and
supports higher-frequency operations with lower electronic noise,
leading to more reliable electronic systems.
Specification of 4 inch diameter 4H/6H-P Silicon Carbide (SiC)
Wafer:
| Specification of 4 inch diameter 4H/6H-P Type Silicon Carbide (SiC)
Substrate |
| Grade |
Zero MPD Production
Grade (Z Grade) |
Standard Production
Grade (P Grade) |
Dummy Grade
(D Grade) |
| Diameter | 99.5 mm~100.0 mm |
| Thickness | 350 μm ± 25 μm |
| Wafer Orientation | Off axis: 2.0°-4.0°toward {11-20} ± 0.5° for 4H/6H-P |
| Micropipe Density | 0 cm-2 |
| Resistivity | ≤0.1 Ω.cm | ≤0.3 Ω.cm |
| Primary Flat Orientation | {10-10} ±5.0° |
| Primary Flat Length |   32.5 mm ± 2.0 mm |
| Secondary Flat Length | 18.0 mm ± 2.0 mm |
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ± 5.0° |
| Edge Exclusion | 3 mm | 6 mm |
| LTV/TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤ 15 μm/≤30 μm | ≤ 10 μm/≤ 15 μm/≤25 μm/≤40 μm |
| Roughness | Polish: Ra≤1 nm |
| CMP: Ra≤0.2 nm | Ra≤0.5 nm |
| Edge Cracks By High Intensity Light | None | Cumulative length ≤ 10 mm, single
length≤2 mm |
| Hex Plates By High Intensity Light | Cumulative area ≤0.05% | Cumulative area ≤0.1% |
| Polytype Areas By High Intensity Light | None | Cumulative area≤3% |
| Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% |
| Silicon Surface Scratches By High Intensity Light | None | Cumulative length≤1×wafer diameter |
| Edge Chips High By Intensity Light | None permitted ≥0.2mm width and depth | 5 allowed, ≤1 mm each |
| Silicon Surface Contamination By High Intensity | None |
| Package | Multi-wafer Cassette or Single Wafer Container |
ZMSH Related Product Recommendation:
6-Inch Silicon Carbide (SiC) Wafer for AR glasses MOS SBD
ZMKJ provides high quality single crystal SiC wafer ( Silicon
Carbide ) to electronic and optoelectronic industry . SiC wafer is
a next generation semiconductor material , with unique electrical
properties and excellent thermal properties , compared to silicon
wafer and GaAs wafer , SiC wafer is more suitable for high
temperature and high power device application . SiC wafer can be
supplied in diameter 2-12 inch , both 4H and 6H SiC , N-type ,
Nitrogen doped , P-Type, semi-insulating type and 3C-N type
available .
Q&A:
Q: What is p-type silicon carbide wafer?
A: A P-type Silicon Carbide (SiC) wafer is a semiconducting
substrate that has been doped with acceptor impurities (usually
aluminum or boron) to create an abundance of holes (positive charge
carriers). It is one of the two main conductive types of SiC wafers
— the other being N-type — and is essential for building p–n
junctions in high-power and high-frequency devices.
Q: What is the difference between P type and N type silicon wafers?
A: N-type wafers conduct via electrons — faster, more efficient for
high-speed devices.
Q- type wafers conduct via holes — useful for complementary circuits
and junction formation. Together, they form the foundation of
nearly all modern semiconductor devices.
Q: Is silicon carbide N type or p-type?
A: Silicon carbide (SiC) can be either N-type or P-type, depending
on how it is doped during crystal growth. Silicon carbide can be
either N-type or P-type, depending on the dopant used. However,
N-type SiC is more commonly used as the substrate material in
modern power and high-frequency semiconductor devices because of
its higher electron mobility and conductivity.
