4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate
What are Silicon Carbide (SiC) Wafers & Substrates?
Silicon Carbide (SiC) wafers and substrates are specialized
materials used in semiconductor technology made from silicon
carbide, a compound known for its high thermal conductivity,
excellent mechanical strength, and wide bandgap. Exceptionally hard
and lightweight, SiC wafers and substrates provide a robust
foundation for fabricating high-power, high-frequency electronic
devices, such as power electronics and radio frequency components.
Silicon carbide wafers’ unique properties make them ideal for applications requiring
high-temperature operation, harsh environments, and improved energy
efficiency.
Introduction to 4H-N SiC Wafers:
4H-N Silicon Carbide (SiC) wafers are n-type single-crystal
substrates made from 4H-polytype silicon carbide, a member of the
third generation of wide-bandgap semiconductor materials. They combine high voltage tolerance, superior thermal conductivity,
and excellent electron mobility, making them the preferred material
for next-generation high-power, high-frequency, and
high-temperature electronic devices.
Specification of ZMSH 4inch 4H-N Sic Substrates:
| Specification of 4 inch diameter 4H-N Silicon Carbide (SiC)
Substrate |
| Grade |
Zero MPD
Production |
Standard Production
Grade(P Grade) |
Dummy Grade
(D Grade) |
| Diameter | 99.5 mm~ 100.0 mm |
| Thickness | 4H-N | 350 μm±15 μm | 350 μm±25 μm |
| Wafer Orientation | Off axis : 4.0° toward <1120 > ±0.5° for 4H-N |
| Micropipe Density | 4H-N | ≤0.2 cm-2 | ≤2 cm-2 | ≤15 cm-2 |
| Resistivity | 4H-N | 0.015~0.024 Ω·cm | 0.015~0.028 Ω·cm |
| Primary Flat Orientation | {10-10} ±5.0° |
| Primary Flat Length | 32.5 mm ± 2.0 mm |
| Secondary Flat Length | 18.0 mm ± 2.0 mm |
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° |
| Edge Exclusion | 3 mm |
| LTV/TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm |
| Roughness | Polish Ra≤1 nm |
| CMP Ra≤0.2 nm | Ra≤0.5 nm |
| Edge Cracks By High Intensity Light | None | Cumulative length ≤ 10 mm, single length≤2 mm |
| Hex Plates By High Intensity Light | Cumulative area ≤0.05% | Cumulative area ≤0.1% |
| Polytype Areas By High Intensity Light | None | Cumulative area≤3% |
| Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% |
Silicon Surface Scratches By High Intensity Light | None | Cumulative length≤1×wafer diameter |
| Edge Chips High By Intensity Light | None permitted ≥0.2 mm width and depth | 5 allowed, ≤1 mm each |
Silicon Surface Contamination By High Intensity | None |
| Threading Screw Dislocation | ≤500 cm-2 | N/A |
| Package | Multi-wafer Cassette Or Single Wafer Container |
Key Advantages of Sic Wafers and Substrates:
Wide Bandgap: Enables high-voltage operation (>1200 V) with low power loss.
High Thermal Conductivity: Excellent heat dissipation for high-power devices.
High Breakdown Field Strength: Supports compact device design with higher performance.
High Electron Mobility: Allows fast switching speeds and low on-resistance.
Radiation Resistance: Ideal for aerospace and defense electronics.
Thermal and Chemical Stability: Performs reliably under extreme temperature and environment.
Applications of 4H-N Type Sic Wafers:
4H-N SiC wafers are used in high-performance electronic
applications due to their excellent thermal, electrical, and
mechanical properties, especially in high-voltage,
high-temperature, and high-frequency environments. Key applications
include power devices (like MOSFETs and diodes), electric vehicle
components, renewable energy systems (such as solar inverters), and
RF devices for communication and radar systems. They are also used
in aerospace, high-temperature sensors, and some optoelectronic
devices.
ZMSH Related SiC Wafer Recommendation:
6-Inch Silicon Carbide (SiC) Wafer for AR glasses MOS SBD
Q&A:
Q:What is the difference between SI wafer and SiC wafer?
A: Silicon wafers are ideal for general-purpose electronics —
affordable and reliable for low-to-medium power devices. SiC
wafers, as wide-bandgap semiconductors, excel in high-power,
high-voltage, and high-temperature environments, enabling faster,
smaller, and more efficient power electronics.
Q: Which is better, SiC or GaN?
A: SiC (Silicon Carbide) is best for high-power, high-voltage,
high-temperature applications such as electric vehicles, rail
transit, and renewable energy.GaN (Gallium Nitride) excels in
high-frequency, low-to-medium voltage applications like fast
chargers, RF amplifiers, and 5G systems.
Q: What is a SiC wafer?
A: A SiC wafer — short for Silicon Carbide wafer — is a
single-crystal substrate made from silicon (Si) and carbon (C)
atoms. It is one of the most important wide-bandgap semiconductor
materials used in next-generation power electronics, RF devices,
and high-temperature applications. A SiC wafer is a
high-performance semiconductor substrate known for its wide
bandgap, superior heat conductivity, and high voltage endurance. It
enables smaller, faster, and more energy-efficient electronic
devices — powering the future of electric vehicles, renewable
energy systems, and advanced communication technologies.
