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BAT68E6327 Schottky Barrier Diode Infineon Technologies RF Schottky Diode

    Buy cheap BAT68E6327 Schottky Barrier Diode Infineon Technologies RF Schottky Diode from wholesalers
     
    Buy cheap BAT68E6327 Schottky Barrier Diode Infineon Technologies RF Schottky Diode from wholesalers
    • Buy cheap BAT68E6327 Schottky Barrier Diode Infineon Technologies RF Schottky Diode from wholesalers

    BAT68E6327 Schottky Barrier Diode Infineon Technologies RF Schottky Diode

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    Brand Name : Infineon Technologies
    Model Number : BAT68E6327HTSA1
    Price : 2.5
    Payment Terms : ,T/T
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    BAT68E6327 Schottky Barrier Diode Infineon Technologies RF Schottky Diode

    BAT68E6327 is a Schottky barrier diode from Infineon Technologies,designed for RF and high-frequency applications.

    Key Features of BAT68E6327

    1. Electrical Characteristics

      • Peak Reverse Voltage (Vr): 8V

      • Maximum Forward Current (If): 130mA

      • Low Forward Voltage Drop (Vf): 390mV (typ) at 5mA

      • Ultra-Low Capacitance: 1pF @ 0V, 1MHz

    2. High-Frequency Performance

      • Optimized for RF and microwave circuits due to fast switching and low noise

      • Low series resistance (Rs): 10Ω @ 5mA, 10kHz

    3. Package & Reliability

      • SOT-23-3 (SC-59, TO-236-3) surface-mount package

      • Wide temperature range: -55°C to +150°C

      • RoHS compliant & lead-free

    Applications

    The BAT68E6327 is widely used in:

    • RF signal detection & mixing (e.g., VHF/UHF circuits)

    • Voltage clamping & protection circuits

    • High-speed data networks & wireless communication (e.g., base stations, satellite receivers)

    • Low-power signal rectification in portable electronics

    Technical Summary

    • Package: SOT-23-3 (3-pin)

    • Power Dissipation: 150mW max

    • Equivalent Models: BAT68-07W, BAT68-08S (for alternate pinouts)

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