Comprehensive Overview of 10×10mm Silicon Carbide (SiC) Substrate
Chips
The 10×10mm Silicon Carbide (SiC) substrate chip is an advanced
single-crystal semiconductor base material, engineered to support
the demanding requirements of modern power electronics and
optoelectronic devices. Known for its exceptional heat dissipation
capability, wide electronic bandgap, and outstanding chemical
robustness, the SiC substrate enables reliable operation of
components in extreme conditions such as high temperature, high
voltage, and high switching frequency environments. These square
SiC chips, precisely cut to 10×10mm, are widely used in R&D
labs, prototype development, and specialized device manufacturing.
Manufacturing Process of Silicon Carbide (SiC) Substrate Chips
Production of Silicon Carbide (SiC) substrates typically utilizes Physical Vapor Transport (PVT) or sublimation crystal growth technologies:
Raw Material Preparation: Ultra-pure SiC powders are placed inside a high-density graphite
crucible.
Crystal Growth: Under a tightly controlled atmosphere and temperatures surpassing 2,000°C, the material sublimates and recondenses onto a seed crystal,
producing a large single-crystal SiC boule with minimized defects.
Ingot Slicing: Diamond wire saws cut the bulk ingot into thin wafers or small
chips.
Lapping & Grinding: Surface planarization eliminates slicing marks and ensures uniform
thickness.
Chemical Mechanical Polishing (CMP): Produces a mirror-smooth surface suitable for epitaxial layer
deposition.
Optional Doping: Introduction of nitrogen (n-type) or aluminum/boron (p-type) to
adjust electrical characteristics.
Quality Assurance: Rigorous flatness, defect density, and thickness uniformity checks
guarantee compliance with semiconductor standards.
Material Properties of Silicon Carbide (SiC)
Silicon Carbide substrates are primarily fabricated in 4H-SiC and 6H-SiC crystal structures:
4H-SiC: Exhibits higher electron mobility and superior performance for
high-voltage power electronics such as MOSFETs and Schottky barrier
diodes.
6H-SiC: Offers properties tailored for RF and microwave applications.
Key physical advantages include:
Wide bandgap: ~3.2–3.3 eV, ensuring high breakdown voltage and efficiency in
power switching devices.
Thermal conductivity: 3.0–4.9 W/cm·K, delivering excellent heat dissipation.
Mechanical strength: Hardness of ~9.2 Mohs, providing resistance to mechanical wear
during processing.
Applications of 10×10mm Silicon Carbide Substrate Chips
Power Electronics: Core material for high-efficiency MOSFETs, IGBTs, and Schottky
diodes in EV powertrains, energy storage, and renewable energy
converters.
Technical Specifications
| Property | Value |
|---|
| Dimensions | 10mm × 10mm square |
| Thickness | 330–500 μm (customizable) |
| Polytype | 4H-SiC or 6H-SiC |
| Orientation | C-plane, off-axis (0°/4°) |
| Surface Finish | Single/double-side polished, epi-ready |
| Doping Options | N-type, P-type |
| Quality Grade | Research or device-grade |
FAQ – Silicon Carbide (SiC) Substrate Chips
Q1: Why choose SiC substrates over traditional silicon?
SiC offers higher breakdown strength, superior thermal performance,
and significantly lower switching losses, enabling devices to
achieve greater efficiency and reliability than those built on
silicon.
Q2: Can these substrates be provided with epitaxial layers?
Yes, epi-ready and custom epitaxy options are available for
high-power, RF, or optoelectronic device requirements.
Q3: Do you offer customized dimensions or doping?
Absolutely. Custom sizes, doping profiles, and surface treatments
are available to meet specific application needs.
Q4: How do SiC substrates perform under extreme operating
conditions?
They maintain structural integrity and electrical stability at
temperatures exceeding 600°C and in radiation-prone environments,
making them indispensable in aerospace, defense, and high-power
industrial sectors.
