3C-N SiC wafer 4inch Silicon Carbide Prime Grade Dummy Grade High
electron mobility RF LED
Description of 3C-N SiC Wafer:
We can offer 4-inch 3C-N Silicon Carbide Wafers with N-Type SiC
Substrates. It has a crystal structure of silicon carbide where the
silicon and carbon atoms are arranged in a cubic lattice with a
diamond-like structure. It has several superior properties to the
widely used 4H-SiC, such as higher electron mobility and saturation
velocity. The performance of 3C-SiC power devices is expected to be
better, cheaper, and easier to manufacture than the currently
mainstream 4H-SiC wafer. It is exceptionally suitable for power
electronic devices.
The Character of 3C-N SiC Wafer:
1. Wide Bandgap
High Breakdown Voltage: 3C-N SiC wafers have a wide bandgap (~3.0
eV), enabling high voltage operation and making them suitable for
power electronics.
2. High Thermal Conductivity
Efficient Heat Dissipation: With a thermal conductivity of about
3.0 W/cm·K, these wafers can effectively dissipate heat, allowing
devices to operate at higher power levels without overheating.
3. High Electron Mobility
Enhanced Performance: The high electron mobility (~1000 cm²/V·s)
leads to faster switching speeds, making 3C-N SiC ideal for
high-frequency applications.
4. Mechanical Strength
Durability: 3C-N SiC wafers exhibit excellent mechanical
properties, including high hardness and resistance to wear, which
enhances their reliability in various applications.
5. Chemical Stability
Corrosion Resistance: The material is chemically stable and
resistant to oxidation, making it suitable for harsh environments.
6. Low Leakage Currents
Efficiency: The low leakage current in devices fabricated from 3C-N
SiC wafers contributes to improved efficiency in power electronics.
Form of 3C-N SiC Wafer:
| Grade | Production Grade | Dummy Grade |
| Diameter | 100 mm +/- 0.5 mm |
| Thickness | 350 um +/- 25 um |
| Polytype | 3C |
| Micropipe Density (MPD) | 5 cm-2 | 30 cm-2 |
| Electrical Resistivity | 0.0005~0.001 Ohm.cm | 0.001~0.0015 Ohm.cm |
Comparison of properties of SiC:
| Property | 4H-SiC Single Crystal | 3C-SiC Single Crystal |
| Lattice Parameters (Å) | a=3.076 c=10.053 | a=4.36 |
| Stacking Sequence | ABCB | ABC |
| Density (g/cm³) | 3.21 | 3.166 |
| Mohs Hardness | ~9.2 | ~9.2 |
| Thermal Expansion Coefficient (CTE) (/K) | 4-5 x 10-6 | 2.5-3.5 x10-6 |
| Dielectric Constant | c ~ 9.66 | c ~ 9.72 |
| Doping Type | N-type or Semi-insulating or P-type | N-type |
| Band-gap (eV) | 3.23 | 2.4 |
| Saturation Drift Velocity (m/s) | 2.0 x 105 | 2.5 x 105 |
| Wafer and Substrate Sizes | Wafers: 2, 4 inch; smaller substrates: 10x10, 20x20 mm, other sizes
are available and can be custom-made upon request |
Physical Photo of 3C-N SiC Wafer:
Applications of 3C-N SiC Wafer:
1. Power Electronics
High-Power Devices: Used in power MOSFETs and IGBTs due to their
high breakdown voltage and thermal conductivity.
Switching Devices: Ideal for applications requiring high
efficiency, such as DC-DC converters and inverters.
2. RF and Microwave Devices
High-Frequency Transistors: Utilized in RF amplifiers and microwave
devices, benefiting from high electron mobility.
Radar and Communication Systems: Employed in satellite
communications and radar technology for improved performance.
3. LED Technology
Blue and Ultraviolet LEDs: 3C-SiC can be used in the production of
light-emitting diodes, particularly for blue and UV light
applications.
4. High-Temperature Applications
Sensors: Suitable for high-temperature sensors used in automotive
and industrial applications.
Aerospace: Utilized in components that must operate effectively in
extreme environments.
Application Picture of 3C-N SiC Wafer:
Packing and Shipping of 3C-N SiC Wafer:
Customized:
Customized SiC crystal products can be made to meet customer's
particular requirements and specifications. Epi-wafers can be
custom made upon request.
Product Recommend:
1.2 inch 3inch 4 inch 6 inch 8inch Sic Wafer 4H-N/Semi Type
2.6inch SiC Wafer 4H/6H-P
