5×5mm 10×10mm SiC Wafer 4H-P 6H-P 3C-N Type Production Grade
Research Grade Dummy Grade
Description of 5×5mm and 10×10mm SiC wafer:
5×5mm and 10×10mm silicon carbide (SiC) wafers are small-sized
substrates that play a crucial role in various semiconductor
applications. Commonly used in compact electronic devices where
space is limited. These SiC wafers are essential components in the
fabrication of electronic devices, power electronics,
optoelectronics, and sensors. Their specific sizes cater to
different requirements in terms of space constraints,
experimentation needs, and production scalability. Researchers,
engineers, and manufacturers leverage these SiC wafers to develop
cutting-edge technologies and explore the unique properties of
silicon carbide for a wide range of applications.
The Characters of 5×5mm and 10×10mm SiC wafer:
4H-P Type SiC:
High electron mobility.
Suitable for high-power and high-frequency applications.
Excellent thermal conductivity.
Ideal for high-temperature operations.
6H-P Type SiC:
Good mechanical strength.
High thermal conductivity.
Used in high-power and high-temperature applications.
Suitable for harsh environment electronics.
3C-N Type SiC:
Versatile for electronics and optoelectronics.
Compatible with silicon technology.
Suitable for integrated circuits.
Offers opportunities for wide-bandgap electronics
The Form of 5×5mm and 10×10mm SiC wafer:
| Grade | Production Grade
(P Grade) | Research Grade
(R Grade) | Dummy Grade
(D Grade) |
| Primary Flat Orientation | 4H/6H-P | {10-10} ±5.0° |
| 3C-N | {1-10} ±5.0° |
| Primary Flat Length | 15.9 mm ±1.7 mm |
| Secondary Flat Length | 8.0 mm ±1.7 mm |
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° |
| Roughness | Polish Ra≤1 nm
CMP Ra≤0.2 nm |
Edge Cracks
By High Intensity Light | None | 1 allowed, ≤1 mm |
Hex Plates
By High Intensity Light | Cumulative area≤1 % | Cumulative area≤3 % |
Polytype Areas
By High Intensity Light | None | Cumulative area≤2 % | Cumulative area≤5% |
Silicon Surface Scratches
By High Intensity Light | 3 scratches to 1×wafer
diameter cumulative length | 5 scratches to 1×wafer
diameter cumulative length | 8 scratches to 1×wafer diameter
cumulative length |
Edge Chips High
By Intensity Light light | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each |
Silicon Surface Contamination
By High Intensity | None |
| Packaging | Multi-wafer Cassette or Single Wafer Container |
The Physical Photo of 5×5mm and 10×10mm SiC wafer:
The Application of 5×5mm and 10×10mm SiC wafer:
4H-P Type SiC:
High-power electronics: Used in power diodes, MOSFETs, and
high-voltage rectifiers.
RF and microwave devices: Suitable for high-frequency applications.
High-temperature environments: Ideal for aerospace and automotive
systems.
6H-P Type SiC:
Power electronics: Utilized in Schottky diodes, power MOSFETs, and
thyristors for high-power applications.
High-temperature electronics: Suitable for harsh environment
electronics.
3C-N Type SiC:
Integrated circuits: Ideal for ICs and MEMS due to compatibility
with silicon technology.
Optoelectronics: Used in LEDs, photodetectors, and sensors.
Biomedical sensors: Applied in biomedical devices for various
sensing applications.
The Application Pictures of 5×5mm and 10×10mm SiC wafer:
FAQ:
1.Q:What is the difference between 3C and 4H-SiC?
A:In general 3C-SiC is known as a low- temperature stable polytype
whereas 4H-and 6H-SiC are known as high-temperature stable
polytypes, which need relatively high temperature and the amount of
defects of the epitaxial layer are correlated to the Cl/Si ratio.
Product Recommend:
1.1.5mm Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For
Epitaxial
