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Ultra-High Thermal Conductivity Silicon Nitride Ceramics For Power Electronics And New Energy Vehicles

    Buy cheap Ultra-High Thermal Conductivity Silicon Nitride Ceramics For Power Electronics And New Energy Vehicles from wholesalers
     
    Buy cheap Ultra-High Thermal Conductivity Silicon Nitride Ceramics For Power Electronics And New Energy Vehicles from wholesalers
    • Buy cheap Ultra-High Thermal Conductivity Silicon Nitride Ceramics For Power Electronics And New Energy Vehicles from wholesalers
    • Buy cheap Ultra-High Thermal Conductivity Silicon Nitride Ceramics For Power Electronics And New Energy Vehicles from wholesalers
    • Buy cheap Ultra-High Thermal Conductivity Silicon Nitride Ceramics For Power Electronics And New Energy Vehicles from wholesalers

    Ultra-High Thermal Conductivity Silicon Nitride Ceramics For Power Electronics And New Energy Vehicles

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    Ultra-High Thermal Conductivity Silicon Nitride Ceramics For Power Electronics And New Energy Vehicles

    Ultra-High Thermal Conductivity Silicon Nitride Ceramics for Power Electronics and New Energy Vehicles


    Silicon nitride (Si₃N₄) ceramic substrates are manufactured using 99.5% high-purity raw materials through tape casting and gas pressure sintering processes. The products exhibit excellent thermal conductivity, high strength and reliability, making them an ideal thermal management solution for next-generation high-power electronic devices.

    Primary Applications

    • Power electronics: IGBT, SiC power modules

    • New energy vehicles: Motor controllers, OBC

    • Rail transportation: Traction converters

    • PV inverters: High-power photovoltaic modules

    • 5G communications: Base station RF devices

    Key Advantages

    ✓ Ultra-high thermal conductivity: ≥90W/(m·K)
    ✓ High strength & toughness: Flexural strength ≥600MPa
    ✓ Low thermal expansion: CTE 3.2×10⁻⁶/°C
    ✓ Excellent insulation: Volume resistivity >10¹⁴Ω·cm
    ✓ Superior reliability: Passes 1000 cycles of -40~150°C thermal shock test

    Technical Specifications

    ParameterSpecificationTest Standard
    Material PuritySi₃N₄≥99.5%GB/T 16535
    Dimensional Accuracy±0.1%IPC-4101
    Thermal Conductivity≥90W/(m·K)ASTM E1461
    Flexural Strength≥600MPaISO 14704
    CTE3.2×10⁻⁶/°CDIN 51045
    Dielectric Strength≥25kV/mmIEC 60672
    Surface RoughnessRa≤0.2μmISO 4287

    Manufacturing Process

    1. Material preparation: Nano-grade Si₃N₊ powder modification

    2. Tape casting: Producing 0.1-1.2mm green tapes

    3. Isostatic pressing: 200MPa densification

    4. Gas pressure sintering: 1850°C/10MPa N₂ atmosphere

    5. Precision machining: Laser cutting, drilling

    6. Surface treatment: Double-side polishing to Ra≤0.2μm

    Usage Guidelines

    ⚠️ Storage: Vacuum packed, moisture and dust proof
    ⚠️ Soldering: Recommended active metal brazing
    ⚠️ Mounting stress: Control <50MPa assembly stress
    ⚠️ Thermal design: Recommended with thermal grease

    After-Sales Service

    • Warranty: 36-month quality guarantee

    • Technical support: Free thermal design consultation

    • Testing service: Third-party test reports available

    • Customization: Special sizes and structures

    FAQ

    Q: Advantages vs AlN substrates?
    A: Main advantages:
    ① 3-5x higher strength
    ② Better thermal shock resistance
    ③ Higher reliability

    Q: Maximum processable size?
    A: Standard 200×200mm, special process up to 300×300mm.

    Q: Recommended metallization?
    A: Options include:
    • DBC direct bonding copper
    • AMB active metal brazing
    • Thick film printing


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