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High Purity Alumina Ceramic with Volume Resistivity of 10 4 Ohm*cm for Semiconductor Applications

    Buy cheap High Purity Alumina Ceramic with Volume Resistivity of 10 4 Ohm*cm for Semiconductor Applications from wholesalers
     
    Buy cheap High Purity Alumina Ceramic with Volume Resistivity of 10 4 Ohm*cm for Semiconductor Applications from wholesalers
    • Buy cheap High Purity Alumina Ceramic with Volume Resistivity of 10 4 Ohm*cm for Semiconductor Applications from wholesalers

    High Purity Alumina Ceramic with Volume Resistivity of 10 4 Ohm*cm for Semiconductor Applications

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    Brand Name : Dayoo
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    High Purity Alumina Ceramic with Volume Resistivity of 10 4 Ohm*cm for Semiconductor Applications

    High Purity Alumina Ceramic with Volume Resistivity of 10 4 Ohm*cm for Semiconductor Applications


    This series of semiconductor-specific alumina ceramic components are manufactured using 99.6% ultra-high purity Al₂O₃ material through precision tape casting and high-temperature sintering processes. The products exhibit excellent insulation, corrosion resistance, and dimensional stability, meeting SEMI Standard F47 cleanliness requirements.

    Primary Semiconductor Applications

    • Wafer fabrication: Etching machine ceramic parts, diffusion boats

    • Packaging & testing: Probe card substrates, test sockets

    • Equipment components: Robot end effectors

    • Vacuum systems: Electrostatic chuck bases

    • Optical inspection: Lithography machine ceramic guides

    Product Advantages

    ✓ Ultra-clean: Metal ion content <0.1ppm
    ✓ Precision dimensions: Tolerance ±0.05mm/100mm
    ✓ Plasma resistance: Etching rate <0.1μm/h
    ✓ Low outgassing: TML<0.1% CVCM<0.01%
    ✓ High reliability: Passes 1000 thermal cycles

    Technical Specifications

    ParameterSpecificationTest Standard
    Material PurityAl₂O₃≥99.6%GDMS
    Volume Resistivity>10¹⁴Ω·cmASTM D257
    Dielectric Constant9.8@1MHzIEC 60250
    Flexural Strength≥400MPaISO 14704
    CTE7.2×10⁻⁶/°CDIN 51045
    Surface RoughnessRa≤0.1μmISO 4287
    OutgassingTML<0.1%ASTM E595

    Semiconductor Manufacturing Process

    1. Material preparation:

      • Nano-grade Al₂O₃ powder (D50≤0.5μm)

      • High-purity ball milling (Y₂O₃-MgO sintering aids)

    2. Forming process:

      • Tape casting (thickness 0.1-5mm)

      • Isostatic pressing (200MPa)

    3. Sintering control:

      • Multi-stage atmosphere sintering (1600°C/H₂)

      • HIP post-treatment (1500°C/150MPa)

    4. Precision machining:

      • Laser processing (±5μm)

      • Ultrasonic drilling (aspect ratio 10:1)

    5. Cleaning & inspection:

      • Megasonic cleaning (Class 1 cleanroom)

      • SEMI F47 particle testing

    Usage Guidelines

    ⚠️ Storage: Class 100 clean packaging
    ⚠️ Installation environment: 23±1°C RH45±5%
    ⚠️ Cleaning: Semiconductor-grade solvents only
    ⚠️ Handling: Avoid direct contact with functional surfaces

    Semiconductor Services

    • Cleanliness verification: VDA19 test reports

    • Failure analysis: SEM/EDS microanalysis

    • Custom development: DFM co-design

    FAQ

    Q: How to ensure wafer contact surface cleanliness?
    A: Triple protection:
    ① Plasma surface activation
    ② Vacuum packaging + N₂ storage
    ③ Pre-installation ionized air cleaning

    Q: Performance in fluorine-based plasma?
    A: Special treated version:
    • Etching rate <0.05μm/h
    • AlF₃ passivation layer
    • 3x longer lifespan

    Q: Maximum processable size?
    A: Standard 200×200mm, special process up to 400×400mm.



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