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Sapphire Wafer 12'' Dia 250mm±0.5mm Thickness 1000 Um C-Plane DSP

    Buy cheap Sapphire Wafer 12'' Dia 250mm±0.5mm Thickness 1000 Um C-Plane DSP from wholesalers
     
    Buy cheap Sapphire Wafer 12'' Dia 250mm±0.5mm Thickness 1000 Um C-Plane DSP from wholesalers
    • Buy cheap Sapphire Wafer 12'' Dia 250mm±0.5mm Thickness 1000 Um C-Plane DSP from wholesalers
    • Buy cheap Sapphire Wafer 12'' Dia 250mm±0.5mm Thickness 1000 Um C-Plane DSP from wholesalers
    • Buy cheap Sapphire Wafer 12'' Dia 250mm±0.5mm Thickness 1000 Um C-Plane DSP from wholesalers
    • Buy cheap Sapphire Wafer 12'' Dia 250mm±0.5mm Thickness 1000 Um C-Plane DSP from wholesalers

    Sapphire Wafer 12'' Dia 250mm±0.5mm Thickness 1000 Um C-Plane DSP

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    Brand Name : zmsh
    Model Number : 12'' Dia 250mm±0.5mm Thickness 1000 Um
    Certification : rohs
    Price : 80
    Payment Terms : T/T, Western Union
    Supply Ability : 1000per month
    Delivery Time : 5-6 weeks
    • Product Details
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    Sapphire Wafer 12'' Dia 250mm±0.5mm Thickness 1000 Um C-Plane DSP

    12" Sapphire Wafer 250mm Diameter (±0.5mm) 1000µm Thickness C-Plane


    This 12-inch (250mm) sapphire wafer delivers industry-leading precision (±0.5mm diameter, 1,000µm thickness) and ultra-high purity (99.99%), optimized for advanced semiconductor and optoelectronic applications. The C-plane (0001) orientation ensures exceptional epitaxial growth quality for GaN-based devices, while its large diameter maximizes production efficiency for high-volume manufacturing. With superior thermal stability (>2,000°C melting point), optical transparency (85%+ from UV to mid-IR), and mechanical robustness (9 Mohs hardness), this wafer is ideal for power electronics, LEDs, laser systems, and cutting-edge quantum technologies.





    Key Features of Sapphire Wafer


    Sapphire Wafer's Large-Format Precision:

    Diameter: 250mm ±0.5mm, compatible with 12" semiconductor fabrication lines.

    Thickness: 1,000µm ±15µm, engineered for mechanical strength and process uniformity.


    Sapphire Wafer's Ultra-High Purity (4N):

    99.99% pure Al₂O, eliminating impurities that degrade optical/electrical performance.


    Sapphire Wafer's Exceptional Material Properties:

    Thermal Stability: Melting point ~2,050°C, suitable for extreme environments.

    Optical Clarity: >85% transmission from 350nm to 4,500nm (UV to mid-IR).

    Hardness: 9 Mohs, resistant to scratches and chemical corrosion.


    Sapphire Wafer's Surface Quality Options:

    Epi-ready polish: Ra <0.3nm (AFM-measured), ideal for thin-film deposition.

    Double-side polishing available for precision optical applications.





    Applications of Sapphire Wafer


    Sapphire Wafer in Advanced Optoelectronics:

    GaN-based LEDs/Laser Diodes: Blue/UV LEDs, VCSELs for LiDAR and 3D sensing.

    Micro-LED Displays: Uniform substrates for next-gen AR/VR screens.


    Sapphire Wafer in Power & RF Devices:

    5G/6G Power Amplifiers: Low dielectric loss at high frequencies.

    HEMTs and MOSFETs: High-voltage transistors for electric vehicles.


    Sapphire Wafer in Industrial & Defense:

    IR Windows/Missile Domes: Transparency in harsh environments (e.g., aerospace).

    Sapphire Sensors: Corrosion-resistant covers for industrial monitoring.


    Sapphire Wafer in Emerging Technologies:

    Wearable Tech: Ultra-durable cover glass for smartwatches.





    Specifications


    Parameter

    Value

    Diameter250mm ±0.5mm
    Thickness1,000µm ±15µm
    OrientationC-plane (0001) ±0.2°
    Purity>99.99% (4N)
    Surface Roughness (Ra)<0.3nm (epi-ready)
    TTV<15µm
    Bow<50um



    Factory Equipments



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