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Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter

    Buy cheap Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter from wholesalers
     
    Buy cheap Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter from wholesalers
    • Buy cheap Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter from wholesalers

    Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter

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    Brand Name : ZFeng
    Payment Terms : L/C,D/A,D/P,T/T,Western Union,MoneyGram
    Delivery Time : 3 Days
    Supply Ability : 500-10000 per Month
    Certification : CE、CB、CCC、ISO9001、ISO14001、ISO45001、EN61439、EN61000
    Price : ¥170 ~ 310
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    Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter

    ZFeng IGBT Module

    IGBT Module (Insulated Gate Bipolar Transistor Module) is a power semiconductor device module that integrates multiple IGBT chips, free-wheeling diodes (FWDs), and associated drive/protection circuits. It is widely applied in power electronics conversion and control systems.

    1. Core Components and Operating Principles
    • IGBT Chips: The core of the module, combining the high input impedance of MOSFETs and the low on-state voltage drop of bipolar transistors, enabling high-speed switching and low losses.
    • Free-Wheeling Diodes (FWDs): Connected in anti-parallel with IGBTs to release energy stored in inductive loads, preventing voltage spikes from damaging devices.
    • Drive and Protection Circuits: Integrated with functions such as signal isolation, overcurrent/overvoltage protection, and temperature monitoring to ensure stable module operation.
    • Packaging Technology: Utilizes ceramic substrates, copper baseplates, etc., optimizing thermal performance (thermal resistance as low as 0.1-0.2 K/W) and enhancing electrical insulation.
    2. Technical Advantages
    • High Power Density: Modular design significantly increases power-handling capability per unit volume. For example, Infineon's PrimePACK™ modules enable hundreds of kilowatts to megawatts of output.
    • High Reliability: Through redundant design, fault self-diagnosis, and thermal management technologies, modules achieve a mean time between failures (MTBF) exceeding 100,000 hours in industrial applications like variable frequency drives.
    • Ease of Use: Built-in drive circuits simplify system design, allowing users to quickly deploy applications by providing only control signals and power.
    3. Typical Application Scenarios
    • Industrial Drives: Used in motor speed control, fan/pump regulation.
    • Renewable Energy Generation: In photovoltaic inverters, IGBT modules convert DC to AC for grid integration.
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