Wafer bonder equipment Room Temperature Bonding,Hydrophilic Bonding
for 4 6 8 12inch SiC-Si SiC-SiC
Wafer bonder equipment’s abstract
This wafer bonder is designed for high-precision bonding of silicon
carbide (SiC) wafers, supporting both room temperature bonding and hydrophilic bonding techniques. It is capable of handling wafers of 4-inch, 6-inch, 8-inch, and 12-inch sizes, and is optimized for SiC-to-Si and SiC-to-SiC bonding
applications. With advanced alignment systems and precise
temperature and pressure control, this equipment ensures high yield
and excellent uniformity for power semiconductor manufacturing and
research applications.
Wafer bonder equipment’s property
Bonding Types: Room Temperature Bonding, Hydrophilic Bonding
Wafer Sizes Supported: 4", 6", 8", 12"
Bonding Materials: SiC-Si, SiC-SiC
Alignment Accuracy: ≤ ±1 µm
Bonding Pressure: 0–5 MPa adjustable
Temperature Range: Room temp up to 400°C (for pre/post treatment if needed)
Vacuum Chamber: High vacuum environment for particle-free bonding
User Interface: Touchscreen interface with programmable recipes
Automation: Optional automatic wafer loading/unloading
Safety Features: Enclosed chamber, overheat protection, emergency stop
The wafer bonder equipment is engineered to support high-precision
bonding processes for advanced semiconductor materials,
particularly for SiC-to-SiC and SiC-to-Si bonding. It accommodates
wafer sizes up to 12 inches, with compatibility for 4", 6", and 8"
wafers as well. The system supports room temperature and
hydrophilic bonding, making it ideal for thermally sensitive
applications. Featuring a high-accuracy optical alignment system
with sub-micron precision, it ensures consistent bonding across the
wafer surface. The equipment includes a programmable control
interface with recipe management, allowing users to tailor bonding
pressure, duration, and optional heating profiles. A high-vacuum
chamber design minimizes particle contamination and improves
bonding quality, while safety features such as over-temperature
protection, interlocks, and emergency shutdown ensure stable and
secure operation. Its modular design also enables integration with
automated wafer handling systems for high-throughput production
environments.
photo
Compatible Materials
Real Case --6inch SiC-SiC
(Main Process Steps for 6-Inch SiC-to-SiC Wafer Bonding
Manufacturing)
(Cross-sectional High-Resolution Transmission Electron Microscopy
(HRTEM) of the SiC MOSFET Channel Region Fabricated on a 6-Inch
Engineered Substrate with Epitaxial Layer)
(IGSS Distribution Maps of Devices Fabricated on a 6-Inch Wafer
(Green Indicates Pass; Yield is 90% in Figure a and 70% in Figure
b))
Application
SiC power device packaging
Research & development of wide bandgap semiconductors
High-temperature, high-frequency electronic module assembly
MEMS and sensor wafer-level packaging
Hybrid wafer integration involving Si, sapphire, or diamond
substrates
Q&A
Q1: What’s the main advantage of bonding SiC at room temperature?
A: It avoids thermal stress and material deformation, crucial for
brittle or mismatched thermal expansion substrates like SiC.
Q2: Can this equipment be used for temporary bonding?
A: While this unit specializes in permanent bonding, a variant with
temporary bonding functionality is available upon request.
Q3: How do you ensure alignment for high-precision wafers?
A: The system uses optical alignment with sub-micron resolution and
auto-correction algorithms.
