12inch SiC wafer Silicon Carbide wafer 300mm 750±25um 4H-N type
orientation 100 Production Research grade
12inch SiC wafer's abstract
This 12-inch Silicon Carbide (SiC) wafer is designed for advanced
semiconductor applications, featuring a 300mm diameter, 750±25µm
thickness, and a 4H-N type crystal orientation with a polytype of
4H-SiC. The wafer is produced using high-quality manufacturing
techniques to meet the standards of research-grade and production
environments. Its robust properties make it well-suited for
high-power, high-temperature, and high-frequency devices, often
used in applications such as electric vehicles (EVs), power
electronics, and RF technology. The wafer’s superior structural
integrity and precise specifications ensure high yields in device
fabrication, offering optimal performance in cutting-edge research
and industrial applications.
12inch SiC wafer's data chart
| 1 2 inch Silicon Carbide (SiC) Substrate Specification |
| Grade | ZeroMPD Production
Grade(Z Grade) | Standard Production
Grade(P Grade) | Dummy Grade
(D Grade) |
| Diameter | 3 0 0 mm |
| Thickness | 4H-N | 750μm±15 μm | 750μm±25 μm |
| 4H-SI | 750μm±15 μm | 750μm±25 μm |
| Wafer Orientation | Off axis : 4.0° toward <1120 >±0.5° for 4H-N, On axis :
<0001>±0.5° for 4H-SI |
| Micropipe Density | 4H-N | ≤0.4cm-2 | ≤4cm-2 | ≤25cm-2 |
| 4H-SI | ≤5cm-2 | ≤10cm-2 | ≤25cm-2 |
| Resistivity | 4H-N | 0.015~0.024 Ω·cm | 0.015~0.028 Ω·cm |
| 4H-SI | ≥1E10 Ω·cm | ≥1E5 Ω·cm |
| Primary Flat Orientation | {10-10} ±5.0° |
| Primary Flat Length | 4H-N | N/A |
| 4H-SI | Notch |
| Edge Exclusion | 3 mm |
| LTV/TTV/Bow /Warp | ≤5μm/≤15μm/≤35 μm/≤55 μm | ≤5μm/≤15μm/≤35 □ μm/≤55 □ μm |
| Roughness | Polish Ra≤1 nm |
| CMP Ra≤0.2 nm | Ra≤0.5 nm |
Edge Cracks By High Intensity Light
Hex Plates By High Intensity Light
Polytype Areas By High Intensity Light
Visual Carbon Inclusions
Silicon Surface Scratches By High Intensity Light | None
Cumulative area ≤0.05%
None
Cumulative area ≤0.05%
None | Cumulative length ≤ 20 mm, single length≤2 mm
Cumulative area ≤0.1%
Cumulative area≤3%
Cumulative area ≤3%
Cumulative length≤1×wafer diameter |
| Edge Chips By High Intensity Light | None permitted ≥0.2mm width and depth | 7 allowed, ≤1 mm each |
| (TSD) Threading screw dislocation | ≤500 cm-2 | N/A |
| (BPD) Base plane dislocation | ≤1000 cm-2 | N/A |
| Silicon Surface Contamination By High Intensity Light | None |
| Packaging | Multi-wafer Cassette Or Single Wafer Container |
| Notes: |
1 Defects limits apply to entire wafer surface except for the edge
exclusion area.
2The scratches should be checked on Si face only.
3 The dislocation data is only from KOH etched wafers. |
12inch SiC wafer's photo
12inch SiC wafer's properties
1. Material Properties of SiC:
- Wide Bandgap: SiC has a wide bandgap (~3.26 eV), allowing it to operate at
higher voltages, temperatures, and frequencies compared to
traditional silicon (Si).
- High Thermal Conductivity: SiC's thermal conductivity is much higher than silicon (about 3.7
W/cm·K), making it well-suited for high-power applications where
heat dissipation is critical.
- High Breakdown Voltage: SiC can handle much higher voltages (up to 10 times higher than
silicon), making it ideal for power electronics, such as power
transistors and diodes.
- High Electron Mobility: The electron mobility in SiC is higher than in traditional
silicon, contributing to faster switching times in electronic
devices.
2. Mechanical Properties:
- High Hardness: SiC is very hard (Mohs hardness of 9), which contributes to its
wear resistance but also makes it difficult to process and machine.
- Stiffness: It has a high Young's modulus, meaning it is stiffer and more
durable compared to silicon, which enhances its robustness in
devices.
- Brittleness: SiC is more brittle than silicon, which is important to consider
during wafer processing and device manufacturing.
12inch SiC wafer's applications
12-inch SiC wafers are primarily used in high-performance power
electronics, including power MOSFETs, diodes, and IGBTs, enabling
efficient energy conversion in industries such as electric vehicles, renewable energy, and industrial power systems. SiC’s high thermal conductivity, wide bandgap, and ability to
withstand high temperatures make it ideal for applications in automotive electronics, power inverters, and high-power energy systems. Its use in high-frequency RF devices and microwave communication systems also makes it critical for telecommunications, aerospace, and
military radar systems.
Additionally, SiC wafers are used in LED and optoelectronics, serving as substrates for blue and UV LEDs, which are crucial for lighting, displays, and sterilization. The
material's resilience in harsh environments enables its use in high-temperature sensors, medical devices, and satellite power systems. With its growing role in smart grids, energy storage, and power distribution, SiC is helping to improve efficiency, reliability, and
performance across a wide range of applications.
12inch SiC wafer's Q&A
1. What is a 12-inch SiC wafer?
Answer: A 12-inch SiC wafer is a silicon carbide (SiC) substrate with a
diameter of 12 inches, primarily used in the semiconductor
industry, especially for high-power, high-temperature, and
high-frequency applications. SiC materials are widely used in power
electronics, automotive electronics, and energy conversion devices
due to their excellent electrical, thermal, and mechanical
properties.
2. What are the advantages of a 12-inch SiC wafer?
Answer: The advantages of a 12-inch SiC wafer include:
- High Temperature Stability: SiC can operate at temperatures up to 600°C or higher, offering
better high-temperature performance than traditional silicon
materials.
- High Power Handling: SiC can withstand high voltage and current, making it suitable
for high-power applications such as electric vehicle battery
management and industrial power supplies.
- High Thermal Conductivity: SiC has a significantly higher thermal conductivity compared to
silicon, which helps in better heat dissipation, improving device
reliability and efficiency.
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