Integrated Circuit Chip MSC180SMA120B 1200V SiC MOSFET Transistors TO-247-4
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...1200V SiC MOSFET Transistors TO-247-4 Product Description Of MSC180SMA120B MSC180SMA120B is Silicon Carbide N-Channel Power MOSFET Transistors, 1200V, 180mΩ SiC MOSFET, package is TO-247-4. Specification Of MSC180SMA120B Part Number MSC180SMA120B FET Type N-Channel Technology SiC......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Industrial 1200V SiC Power Transistors , Stable High Voltage N Channel Mosfet
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...SiC MOSFETs) are an advanced type of power device, with high efficiency and excellent performance. SiC MOSFETs feature low on-resistance and high power capabilities, enabling reliable operation and superior switching performance. Based on the national military standard production line, the process is stable and the quality is reliable. The use of SiC MOSFETs...
Reasunos Semiconductor Technology Co., Ltd.
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750319331 Auxiliary Gate Drive Transformer EP7 Package For SiC-MOSFET / IGBT
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... for 568 Vrms / 800 Vpk Operating temperature: -40 °C up to +130 °C Common control voltages for SiC MOSFET’s High Common-mode Transient Immunity (CMTI) Flyback, LLC, Half-Bridge topologies Up to 6 W output power Wide range ......
SHAREWAY TECHNOLOGY CO., LTD.
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Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET
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Description Silicon nitride ceramics have many excellent performances such as high hardness, high strength, small thermal expansion coefficient, small high temperature creep, good antioxidant performance, good thermal corrosion performance, and small ......
Zhuhai Cersol Technology Co, Ltd
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SiC Seed Wafer 4H N Type Dia 153 155 2inch-12inch Customized For Manufacturing MOSFETs
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...SiC seed wafers SiC seed wafer 4H N type Dia 153 155 2inch-12inch customized Used for manufacturing MOSFETs Silicon Carbide (SiC) seed crystal wafers serve as fundamental materials in the semiconductor industry. Manufactured from high-purity silicon carbide (SiC) raw materials through Physical Vapor Transport (PVT) or High-Temperature Chemical Vapor Deposition (HTCVD) processes, our company specializes in supplying 2-12 inch SiC......
SHANGHAI FAMOUS TRADE CO.,LTD
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1011GN-1200V
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...1200V Overview\\n1011GN-1200V is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have 1011GN-1200V......
Rozee Electronics Co., Ltd
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1200v 50a High Power Mosfet Transistors / Thyristor CLA50E1200HB
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...MOSFET TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light: n channel mosfet transistor , n channel transistor CLA50E1200HB High Efficiency Thyristor for for line frequency 1200V......
Shenzhen Huahao Gaosheng Technology Co., Ltd
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1200V 75A PIM Mosfet Power Module IC 7MBR75UB120-50 IGBT Module Driver
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1200V 75A PIM Mosfet Power Module IC 7MBR75UB120-50 IGBT Module Driver 7MBR75UB120-50 IGBT MODULE (U series) 1200V / 75A / PIM Features . Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic ......
Anterwell Technology Ltd.
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CLA50E1200HB High Power Mosfet Transistors / Thyristor For Line Frequency 1200V 50A
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CLA50E1200HB High Efficiency Thyristor for for line frequency 1200V 50A Features / Advantages: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability Applications: ● Softstart AC motor control ● DC Motor control ● Power converter ● ......
Shenzhen Koben Electronics Co., Ltd.
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6H-N Semi-insulating SiC Substarte / Wafer For MOSFETs、JFETs BJTs High Resistivity Wide Bandgap
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6H-N Semi-insulating SiC substarte/wafer for MOSFETs,JFETs BJTs,high resistivity wide bandgap Semi-insulating SiC substarte/wafer's abstract Semi-insulating silicon carbide (SiC) substrates/wafers have emerged as crucial materials in the realm of advanced ......
SHANGHAI FAMOUS TRADE CO.,LTD
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