13db N Female Power RF Tapper 150/155/160dBc 350-6000MHz
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13db N Female Power RF Tapper -150/-155/-160dBc 350-6000MHz Wide band frequency Low PIM Good VSWR PartNumber VN-TAP-03560-OP13 Operating Frequency ( MHz ) 350-960/1710-2700/3500-4500/4900-6000 Impedance ( Ohm ) 50 Tapper coupling(dB) 13 Coupling loss (dB......
HeFei Vinncom Electronic Technology Co.,Ltd.
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6db 4.3-10 Female -153dBc 698-3800MHz RF Tapper
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Part Number VN-TP-0738-ON6 Operating Frequency ( MHz ) 698-3800 Impedance ( Ohm ) 50 VSWR ≤1.25 Attenuation (dB) 6 ± 0.8 IM3 (dBc @ 2×43dBm) -153 / -160 Application Indoor & Outdoor Degree of Protection IP65 Operating Temperature ( ℃ ) -40 ~ + 80 Interface......
HeFei Vinncom Science And Technology Co.,LTD
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9.43 To 9.53 GHz 15dBm Power Amplifier with 13dB Small Signal Gain
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...-40℃~+85℃ Operating Temperature · Small Signal Gain 13dB · CE, RoHS, REACH compliant · 1 Year Warranty Description: The LT-PA-094095-G13P15 from ZR is a RF Amplifier with Frequency 9.43 to 9.53 GHz, Small Signal Gain 13 dB, Gain Flatness ±0......
Sichuan ZR Hi-Tech Ltd.
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Wireless Communication Module HMC341LC3BTR 3V 1 Channel 13dB Gain RF Amplifier IC
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Wireless Communication Module HMC341LC3BTR 3V 1 Channel 13dB Gain RF Amplifier IC [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Red 5W RF DC-3GHz Coaxial Fixed Attenuator Nm-NF Connector 3dB 5dB 6dB 7dB 8dB 10dB 13dB 15dB 20dB 30dB 40dB
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Features: ★Wide frequency band, wide coverage ★PIM optimized design. ★Ideal for all kind of DAS applications. ★Low insertion loss. ★High power handling. ★Small size, Low weight. ★Good stability. Specifications: Frequency Range(MHz) DC-3800 VSWR ≤ 1.25 ......
Anhui Bonfire Technology Co., Ltd
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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... FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio ......
Shenzhen Koben Electronics Co., Ltd.
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BLL1214-250R,112 Field Effect Transistor Transistors FETs MOSFETs RF Chip
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BLL1214-250R,112 Specifications Part Status Obsolete Transistor Type LDMOS Frequency 1.2GHz ~ 1.4GHz Gain 13dB Voltage - Test 36V Current Rating - Noise Figure - Current - Test 150mA Power - Output 250W Voltage - Rated 75V Package / Case SOT-502A Supplier ......
KZ TECHNOLOGY (HONGKONG) LIMITED
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DCW-11-722+
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RF Directional Coupler Cellular, PCS 2.4GHz ~ 7.2GHz 13dB 1W 0603 (1608 Metric), 4 PC Pad...
KANG DA ELECTRONICS CO.
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DCW-11-722+
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RF Directional Coupler Cellular, PCS 2.4GHz ~ 7.2GHz 13dB 1W 0603 (1608 Metric), 4 PC Pad...
Beijing Silk Road Enterprise Management Services Co.,LTD
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DCW-11-722+
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RF Directional Coupler Cellular, PCS 2.4GHz ~ 7.2GHz 13dB 1W 0603 (1608 Metric), 4 PC Pad...
Beijing Silk Road Enterprise Management Services Co.,LTD
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