High Power FDMA2002NZ Dual N Channel Mosfet 30v 2.9A 123mΩ
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High Power MOSFET FDMA2002NZ Dual N-Channel PowerTrench® MOSFET 30V, 2.9A, 123mΩ High Power MOSFET FDMA2002NZ Dual N-Channel PowerTrench® MOSFET 30V, 2.9A, 123mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-......
Sunbeam Electronics (Hong Kong) Limited
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Semiconductor FDMC86261P Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities
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...Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities 150V FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta), 9A (Tc) Drive ......
Shenzhen Sai Collie Technology Co., Ltd.
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Integrated Circuit Chip IRF7316QPBF---- HEXFET Power MOSFET
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...MOSFET Specifications: Datasheets IRF7316QPbF Product Photos 8-SOIC Standard Package 1 Category Discrete Semiconductor Products Family FETs - Arrays Series HEXFET® Packaging Cut Tape (CT) FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25° C 4.9A Rds On (Max) @ Id, Vgs 58 mOhm @ 4.9A......
Mega Source Elec.Limited
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FDS9958 Field Effect Transistor Transistors FETs MOSFETs Arrays
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FDS9958 Specifications Part Status Active FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 2.9A Rds On (Max) @ Id, Vgs 105 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate......
KZ TECHNOLOGY (HONGKONG) LIMITED
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NCP51560BBDWR2G Optoelectronics Components SOIC-16 Power Management ICs
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... output current capability. The NCP51560 is intended for fast switching to drive power MOSFETs and SiC MOSFET power switches. Short and matched propagation delays are also featured on the devices. The onsemi NCP51560 Isolated Dual-Channel Gate Driver has a...
Shenzhen Zhongkaixin Micro Electronics Co., Ltd.
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