500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
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GaAs Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 3" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( LT-GaAs , AlAs ) or ternary alloy ( AlGaAs , InGaAs ,GaAsP , InGaP ) on GaAs......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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2" S Doped GaP Semiconductor EPI Wafer N Type P Type 250um 300um Light-Emitting Diodes
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2” S Dopped GaP Semiconductor EPI Wafer N Type P Type 250um 300um Light-Emitting Diodes Description: Gallium phosphide (GaP) is a group Ⅲ-V compound. The appearance is orange-red transparent crystal.Gallium phosphide is used to make inexpensive red, green......
SHANGHAI FAMOUS TRADE CO.,LTD
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P Type , GaAs Wafer With Low Etch Pit Density , 2”, Prime Grade , Epi Ready
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... used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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