2 Inch Gallium Nitride Wafer Sapphire Template Epi Wafers
|
...) epi wafers, we offer 2-6inch GaN on sapphire epi wafers for microwave electronics applications with a thickness of 2 on C-plane sapphire substrates 430um inch, 4 inch 520um, 650um and 6 inch 1000-1300um, the normal value of GaN buffer layer is 2-4um;...
SHANGHAI FAMOUS TRADE CO.,LTD
|
2 Inch Freestanding Si-GaN GaN(Gallium Nitride) Substrates And Wafers
|
...Inch Freestanding Si-GaN GaN(Gallium Nitride) Substrates And Wafers PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density. PAM-XIAMEN offers full range of GaN and Related III-N Materials including GaN substrates......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
|
2 4 Inch 4-5 Um III Gallium Nitride Wafer 0.43 Mm Sapphire Sic Substrates
|
...substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane) GaN Wafer Characteristic III-Nitride(GaN,AlN,InN) Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride...
SHANGHAI FAMOUS TRADE CO.,LTD
|
3 Inch Diameter SGGG Substrate Film (Subsituted Gadolinium Gallium Garnet)
|
...Inch Diameter SGGG Substrate Film (Subsituted Gadolinium Gallium Garnet) SGGG single crystal, e.g. substituted gadolinium gallium garnet is grown by Czochralski method . SGGG crystals with calcium, magnesium and zirconium as substituting ions, which are used as the substrates......
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
|
Gallium Nitride On Sapphire Semiconductor GaN 100mm
|
|
Gallium Nitride on Sapphire Wafers (GaN) We grow are sapphire wafers using several methods Czrochroski (CZ) process is known to be more efficient for c-axis sapphire substrate production. Heat Exchanger Method (HEM) - Used to grow sapphire crystal in ......
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
|
SiC Ingot Factory Conductive SiC Substrate Supplier 6 inch
|
...Conductive SiC Substrate Supplier 6 inch China HMT company supply high quality SiC ingot at competitive price. The thickness of SiC ingot is 15~20mm per PCS. The third generation semiconductor uses Silicon Carbide (SiC)and Gallium Nitride (GaN) as the main......
Homray Material Technology
|
3 Inches GGG Crystal Magneto Optical Gadolinium Gallium Garnet
|
Gadolinium gallium garnet (GGG) In optical communication equipment, 1.3 μ And 1.5 μ The core part of the optical isolator is YIG or big film placed in magnetic field. The GGG single crystal substrates with different tangential directions can match the ......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
|
4 Inch LNOI Wafer Achieving Compact Photonic Integration
|
.... LNOI substrates are fabricated by transferring a thin layer of lithium niobate (LiNbO3) crystal onto an insulating substrate, typically silicon dioxide (SiO2) or silicon nitride (Si3N4). This technology offers unique advantages for the development of...
Hangzhou Freqcontrol Electronic Technology Ltd.
|
12 Inche Diameter 300mm 10/30 Electroplated CBN Grinding Wheel
|
Basic structure and composition CBN abrasive layer: High-purity cubic boron nitride (CBN) particles are fixed on the surface of the metal substrate through an electroplating process. Substrate material: High-strength 45# steel or aluminum alloy is used. ......
ZHENGZHOU JINCHUAN ABRASIVES CO., LTD.
|
GUVA-S12SD UV Lamp Sensor Schottky UV Index Monitoring Sensor
|
Product Description: GUVA-S12SD Uv Index Or UV Lamp Monitoring Sensor Features: Gallium nitride substrate Schottky photodiode Using portable devices (cell phones, etc.) to measure UV index Uv-a lamp monitoring Photovoltaic operation ......
ShenzhenYijiajie Electronic Co., Ltd.
|
