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200w rf power transistors

from 1776 Products

AD9364BBCZ RF Power Transistors 200W High Performing Reliable Power Solutions

China AD9364BBCZ RF Power Transistors 200W High Performing Reliable Power Solutions on sale
AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

RF Power Transistors MRW53601 NPN SILICON RF POWER TRANSISTOR MOTOROLA RF Power Transistors

China RF Power Transistors MRW53601 NPN SILICON RF POWER TRANSISTOR MOTOROLA RF Power Transistors on sale
MRW53601 is a NPN SILICON RF POWER TRANSISTOR. Part NO: MRW53601 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ......
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

Powerful Rackmount Device 19 Inch 2000-4000 MHz 200W RF Power Amplifier For Microwave Communication

China Powerful Rackmount Device 19 Inch 2000-4000 MHz 200W RF Power Amplifier For Microwave Communication on sale
... 19-inch racks with a height of 5U. It operates within a frequency range of 2000 to 4000 MHz and provides up to 200 Watts of output power, making it ideal for applications such as microwave communication, satellite transmission, and...
Nanjing Shinewave Technology Co., Ltd.

Address: Room 410, building 2, Big Data Industrial Base, Software Avenue, Yuhuatai District, Nanjing

RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

China RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers on sale
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND  ...
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

High Power 5-200W RF Power Amplifier UHF 433 MHz RF Module For Signal Jammer

China High Power 5-200W RF Power Amplifier UHF 433 MHz RF Module For Signal Jammer on sale
...Power 5-200W RF Power Amplifier UHF 433 MHz For Signal Jammer MOdule Very powerful 433MHz signal jammer module , 5-200w power can be customized . This RF amplifier has rugged exterior aluminum alloy shell , and with temperature and standing wave protection , have good performance , which have RF sweep frequency technology , so this RF module can be widely used for anti drone jammer field . Other frequency bands of RF......
Shenzhen TeXin electronic Co., Limited

Address: 201, Building A, No.1 Xinghua Road, Pingxi Community, Pingdi Street, Longgang District, Shenzhen

Industrial and Research 200W RF Power Amplifier with Professional-Grade Performance and Compact Design

China Industrial and Research 200W RF Power Amplifier with Professional-Grade Performance and Compact Design on sale
NXPA20-1000MHz 200W RF Power Amplifier – High-Integration & High-Performance Signal Amplification Equipmen Product Overview This NXPA20-1000MHz 200W RF Power Amplifier is a professional-grade device designed for high-demand signal amplification scenarios......
Nengxun Communication Technology Co.,Ltd.

Address: Address: 401, Jinxinuo Signal Connection Technology Industrial Park, No. 50, Baolong 2nd Road, Baolong Street, Longgang District, Shenzhen City, Guangdong Province

50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor

China 50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor on sale
...RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.

Address: Room 107, Sanjiang Yuan, 399 Linquan Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province

D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET

China D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET on sale
...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power...
Wisdtech Technology Co.,Limited

Address: Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China

Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors

China Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors on sale
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VBE Technology Shenzhen Co., Ltd.

Address: Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China

MDmesh DM6 High Voltage Mosfet , Enhancement Rf Power Transistor For LED Lighting

China MDmesh DM6 High Voltage Mosfet , Enhancement Rf Power Transistor For LED Lighting on sale
Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely ......
Shenzhen Weitaixu Capacitor Co.,Ltd

Address: 9E, Block A, Huaqiang Plaza, Huaqiangbei, Futian, Shenzhen, China

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