Stable 20V Low Power P Channel Mosfet , Practical Low Voltage High Current Transistor
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Product Description: Introducing Low Voltage MOSFET from SGT, a breakthrough FOM optimization which covers more applications. This low gate voltage mosfet offers low power loss and low threshold voltage that allows it to be used in various motor driver, 5G......
Reasunos Semiconductor Technology Co., Ltd.
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LT40P04AD TO-252 Package Low Power P Channel Mosfet For PWM Application
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LT40P04AD Low Voltage MOSFET TO-252 Package P Channel For PWM Application Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON) 4.5V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. TYP MAX TYP MAX Typ Typ LT40P04AD TO-252......
Guangdong Lingxun Microelectronics Co., Ltd
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NTMFS4C024NT1G Integrated Circuit Chip 2.8mOhm Low Power N Channel Mosfet
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Integrated Circuit Chip NTMFS4C024NT1G N-Channel Transistors 30V 5-DFN package Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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IRF530NPBF MOSFET Power Electronics High Power N Channel MOSFET Switching Applications
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...MOSFET Power Electronics High Power N Channel MOSFET Switching Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 90mOhm @ 9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V Vgs (Max) ±20V......
Shenzhen Sai Collie Technology Co., Ltd.
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SOT-23 3 Leads 20V 5A CJ2312 N Channel Mosfet
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CJ2312 N - Channel 20V 5A ( D - S ) Mosfet SOT-23 ( TO-236 ) 3-Lead Plastic - Encapsulate Mosfets FEATURES: • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating:2000V HBM Application Battery protection Load switch Power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating:2000V HBM Application Battery protection Load switch Power......
Beijing Silk Road Enterprise Management Services Co.,LTD
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BSS123LT1G N-Channel MOSFET Low 170mΩ RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection
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BSS123LT1G N-Channel MOSFET Low 170mΩ RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection Features •HBM Class 0A, MM Class M1B (Note 4) •BVSS Prefix for ......
TOP Electronic Industry Co., Ltd.
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High Power FDMA1024NZ Dual N Channel MOSFET 20V 5.0A 54mΩ
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High Power MOSFET FDMA1024NZ Dual N-Channel PowerTrench® MOSFET 20V, 5.0A, 54mΩ High Power MOSFET FDMA1024NZ Dual N-Channel PowerTrench® MOSFET 20V, 5.0A, 54mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors......
Sunbeam Electronics (Hong Kong) Limited
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IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET
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...Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low......
Shenzhen Retechip Electronics Co., Ltd
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