30W GaN RF Power Amplifier Module 720-1020MHz Anti Drone
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Shenzhen Ladasky Technology Co.，Ltd
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900MHz 30W GaN RF Power Amplifier Drone Counter Module for Anti Drone System Uav Detection
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Padi Fly main business includes UAV detector module, handheld detection, backpack detection, vehicle detection, UAV accessories, etc. Product Description Product Parameters Brand Name PADI FLY Working frequency 900MHz Saturated output power 40±1dBm Gain 42......
Padi Fly Technology Co., Ltd
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CMPA2735030S GaN IC 30W GaN MMIC Power Amplifier QFN32
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CMPA2735030S GaN IC 30W GaN MMIC Power Amplifier QFN32 [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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2.4G 4G 50W 2300-2500MHz GaN RF Power Amplifier Drone Counter Module for Anti Drone System Mavic3 Fpv Djis Autel Anti Fpv with Isolation Protector
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... Voltage 5, Adjustable GAN Voltage 6, GAN Voltage 7, Isolation Protector 1.RF Data Item Spec. Remarks Frequency Range(MHz) 2300-2500 Bandwidth Range±10MHz Working Voltage 28V 24-30V Analog sweeping speed 250KHz Output Power (Max) ≥47dBm 50W Gain......
JinYaTong Technology(china) Co., Ltd
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Customized High Linearity 4000-5000 MHz RF Power Amplifier for Wireless Communication Systems with GaN Technology
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... within the 4-5 GHz frequency range, delivering up to 50W of output power. It is widely used in applications such as wireless communication systems, radar technologies, electronic warfare, and testing scenarios, meeting the needs of high-frequency and...
Nanjing Shinewave Technology Co., Ltd.
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30 Watt RF Power Amplifier Long Range Transmission Frequency Customized 28V
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... Power amplifier Working Frequency (MHz) can customized Max output power(dBm) 45±1dBm Working Bandwidth 50MHz Gain(dB) 50dB±1dB Passband Fluctuation ≤1.5dB (Peak to peak ......
Shenzhen Huanuo Innovate Technology Co.,Ltd
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50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor
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... 50W Gallium Nitride 28V DC-4GHz High Electron Mobility GAN RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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QPA2933 Integrated Circuits ICs , Rf Power Amplifier Ic 3.3GHz 60W GaN PA OVM
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... of saturated output power and 28dB of large-signal gain while achieving 62% power-added efficiency. The QPA2933 is fabricated on a 0.25µm QGaN25 GaN (Gallium Nitride) on SiC (Silicon Carbide) process and can support a variety of operating conditions to...
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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RF Power Transistors MRF5177 - Motorola, Inc - 30W, 400MHZ RF POWER TRANSISTOR NPN SILICON
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...30W, 400MHZ RF POWER TRANSISTOR NPN SILICON Description: …designed for VHK/UHF power amplifier applications.This device is optimized for rugged performance in 225-400MHz communications equipment. Applications: Performance @400MHz,28Vdc-Power Output=30W......
Mega Source Elec.Limited
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ISO 9001 RF Power Amplifier Module With Gain Flatness ≤±0.5dB Group Delay ≤2ns RF Signal Jammer Module
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RF Power Amplifier with Gain Flatness ≤±0.5dB and Group Delay ≤2ns, RF Signal Jammer Module Product Description: RF Power Amplifier Module This RF Power Amplifier Module is designed to provide high power and low noise performance in a compact package. It features an operating temperature range of -40℃ to +85℃, a weight of only 100g, and a VSWR of 1.5:1. The RF Power Amplifier Module is built with a built-in VCO, which permits RF......
VBE Technology Shenzhen Co., Ltd.
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