4H Semi-Insulating SiC Wafer With Low TTV/BOW/WARP, Dummy Grade,3”Size
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.... SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type ,...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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4H-SEMI Polished Sic Wafer lens 2INCH 3INCH 4INCH 9.0 Hardness For Device Material
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... Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å Stacking Sequence ABCB ABCACB Mohs ......
SHANGHAI FAMOUS TRADE CO.,LTD
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8inch 12inch 4H-N Type SiC Wafer Thickness 500±25um 1000±50 N Doped Dummy Prime Research Grade
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...4H-N type SiC Wafer thickness 500±25um n doped dummy prime research grade 8inch 12inch 4H-N type SiC Wafer's abstract This study presents the characterization of an 8-inch 12-inchH-N type silicon carbide (SiC) wafer intended for semiconductor applications. The wafer......
SHANGHAI FAMOUS TRADE CO.,LTD
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4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer supplier
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4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer supplier Homray Material Technologyprovide high quality silicon carbide SiC wafer to electronic and opto electronicindustry. Silicon carbide SiC waferis a next generation semiconductor material, with unique electricalpropertiesand excellent thermal properties , compared to silicon wafer and galliumarsenide wafer......
Homray Material Technology
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