10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier
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10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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50W GaN Power Amplifier 150-200MHz for Anti-Drone Systems
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...Power Amplifier GaN Anti-FPV Module for Counter Drone Systems Key Specifications Attribute Value Customization Range 10-6700MHz, 10-200W Frequency & Power 150-200MHz 50W Gain 47dBm Voltage 24-32V Working Efficiency >60% Size 38×112×19.5mm Product Features High-efficiency GaN technology for superior RF performance Wide customization options for frequency (10-6700MHz) and power......
Shenzhen Ladasky Technology Co.，Ltd
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6 To 12 GHz X Band Gan Power Amplifier Psat CW 47 W RF Power Amplifier
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X Band Power Amplifier 6-12 GHz Psat CW 47 W RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and ......
Nanjing Shinewave Technology Co., Ltd.
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Wireless Communication Module QPA3069TR7 High-Power S-band GaN Power Amplifier
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Wireless Communication Module QPA3069TR7 High-Power S-band GaN Power Amplifier [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Customized Portable RF Power Amplifier Module 1560-1620MHz 50W GaN Module
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... indicators of the 1.2G 50W power amplifier module, the definition of each port of the module, the appearance and structure of the module, etc. 3.This document applies to all aspects of product design, verification, production and quality ......
Padi Fly Technology Co., Ltd
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QPA2933 Integrated Circuits ICs , Rf Power Amplifier Ic 3.3GHz 60W GaN PA OVM
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... of saturated output power and 28dB of large-signal gain while achieving 62% power-added efficiency. The QPA2933 is fabricated on a 0.25µm QGaN25 GaN (Gallium Nitride) on SiC (Silicon Carbide) process and can support a variety of operating conditions to...
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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30W 50V GaN HEMT Rf PA Power Amplifier RF Power Transistor for 5700- 5900MHz
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... 100% New YP40601625T 30W 50V 5700- 5900MHz PA Power Amplifier RF Power Transistor with Standard Features Product Description The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for multiple applications with frequencies 4000 to 6000MHz, in......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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1.4G 1.5G 37dBm 5W LTE Power Amplifier Aluminium Case With High Power Output
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... to enhance the efficiency and reliability of mobile network communication. With its excellent linearity, high power output, and low noise figure, this amplifier is the perfect solution for all your 5G, 4G, 3G, and 2G needs. High Efficiency One of the...
Shenzhen Maixintong Technology Co., Ltd
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High Power 5.2G 50W Signal Power Amplifier Module Max Gain 47dBm For Anti Drone
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... China module manufacturer, supplier and exporter. Adhering to the pursuit of perfect quality of products, so that our module have been satisfied by many customers. 5.2 G 50w signal power amplifier module The 5.2G 50W signal power amplifier module is...
Shenzhen TeXin electronic Co., Limited
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100W 500-600MHz Customized RF Power Amplifier Module Jamming PA GaN Drone Fpv C-Uas Anti Drone Module With GAN and Isolation Protector
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Product Parameters Main Components : 1, Adjustable Bandwidth 2, Adjustable Bandwidth 3, Adjustable Driver Tube Voltage 4, Tube Voltage 5, Adjustable GAN Voltage 6, GAN Voltage 1.RF Data Item Spec. Remarks Frequency Range(MHz) 500-600 Bandwidth Range±10MHz ......
JinYaTong Technology(china) Co., Ltd
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