High Power N Channel MOSFET for Solar Inverters High Voltage DC/DC Converters and Motor Drivers
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Product Description: The High Power MOSFET is an advanced semiconductor device designed to meet the demanding requirements of modern electronic applications. As a high power n channel MOSFET, this product is engineered to deliver exceptional performance......
Reasunos Semiconductor Technology Co., Ltd.
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IRFP260NPBF Mosfet Power Transistor 64-6005PBF N- Channel MOSFET 200V 50A 300W Through Hole TO-247AC
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...Channel MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant Other Name:64-6005PBF Feature l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 50A......
Shenzhen Koben Electronics Co., Ltd.
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1200v 50a High Power Mosfet Transistors / Thyristor CLA50E1200HB
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...MOSFET TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light: n channel mosfet transistor , n channel transistor CLA50E1200HB High Efficiency Thyristor for for line frequency 1200V 50A......
Shenzhen Huahao Gaosheng Technology Co., Ltd
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IRFB7546PBF Power Mosfet 100V 50A N-Channel Low RDS(On) Through Hole
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... Polarity: N-Channel • Maximum Drain Source Voltage: 75V • Maximum Gate Source Voltage: 20V • Maximum Drain Current: 57A • Maximum ......
Shenzhen Sai Collie Technology Co., Ltd.
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25A Automotive IGBT Modules FS45MR12W1M1B11BOMA1 20mW 6N-Channel MOSFET Module
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...Silicon Carbide Modules, Chassis Mount. Specification Of FS45MR12W1M1B11BOMA1 Part Number: FS45MR12W1M1B11BOMA1 VDSS: 1200V ID Nom: 25A IDRM: 50A Configuration: 6 N-Channel (3-Phase Bridge) Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ) Features Of...
ShenZhen Mingjiada Electronics Co.,Ltd.
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STL150N3LLH5 N-CH MOSFET IC 30V 195A POWERFLAT N P Channel Mosfet
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... MOSFET N-CH 30V 195A POWERFLAT N P Channel Mosfet Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: PowerFLAT-5x6-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel ......
Wisdtech Technology Co.,Limited
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OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode
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...Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode N Channel Mosfet Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. N Channel Mosfet...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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IRF7342TRPBF N-Channel MOSFET, 40V Vds, 9.1A Id, Low Rds(on), SOIC-8 SMT, RoHS Compliant, Fast Switching for Power Electronics
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... IRF7103TRPBF N-Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) developed......
Berton Electronics Limited
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Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF
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...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs......
Anterwell Technology Ltd.
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NTMFS4833NT1G Transistor N Channel Mosfet 30v 5 Pin 16A 156A
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... N-channel MOSFET Transistor; 191 A; 30 V; 8-Pin SO-8FL 3. Trans MOSFET N-CH 30V 28A 8-Pin SO-FL T/R Technological Parameters: Polarity N - Channel Dissipated power 125 W Threshold voltage 1.5 V input capacitor 5600pF @12V Drain-source voltage 30 V...
Shenzhen Res Electronics Limited
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