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60n60fd1 igbt bipolar

from 34 Products

Stable Charging Pile Ultra Fast IGBT , Industrial Insulated Gate Bipolar Transistor

China Stable Charging Pile Ultra Fast IGBT , Industrial Insulated Gate Bipolar Transistor on sale
... excellent combination of low conduction losses, high switching frequency, high reliability, and high current density. High Power IGBT has a current density of 400A/cm2 and an application frequency of 60KHz. It also has a number of advantages, such as its...
Reasunos Semiconductor Technology Co., Ltd.

Address: 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province

BIDW30N60T Trench Field Stop IGBT 600V 60A 230W Through Hole TO-247

China BIDW30N60T Trench Field Stop IGBT 600V 60A 230W Through Hole TO-247 on sale
...technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a...
HongKong Wei Ya Hua Electronic Technology Co.,Limited

Address: Room 3001-2, Tower A, World Trade Plaza, No. 9 Fuhong Road, Futian District, Shenzhen

KWP75H12E4-7M Versatile IGBT Module Fast Switching Industrial Igbt Power Module ODM

China KWP75H12E4-7M Versatile IGBT Module Fast Switching Industrial Igbt Power Module ODM on sale
... Gate Bipolar Transistor Assembly (IGBT), an Isolated Gate Thyristor Module, and an Insulated Gate Bipolar Transistor Element in a single package. This high-performance module is designed to provide efficient power switching capabilities in a wide range of...
Krunter Future Tech (Dongguan) Co., Ltd.

Address: RM 708, Building A, No.5 Keji No.2 Road, Songshan Lake, Dongguan, P.R.China

MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors

China MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors on sale
MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Address: FLAT/RM D52 3/F WONG KING INDUSTRIAL BUILDING NO 2TAU=I YAU STREET

Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode

China Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode on sale
G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ......
Shenzhen ATFU Electronics Technology ltd

Address: Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031

STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W

China STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W on sale
... Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology......
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

Practical 60KHz Inverter IGBT , Multi Function Gate Bipolar Transistor

China Practical 60KHz Inverter IGBT , Multi Function Gate Bipolar Transistor on sale
Practical 60KHz Inverter IGBT , Multi Function Gate Bipolar Transistor Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged PFC applications • Uninterruptible ......
Guangdong Lingxun Microelectronics Co., Ltd

Address: No.7,XingRong Road,ShiJie Town,Dongguan City,Guangdong Province,China

Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1

China Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 on sale
PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage......
Guangzhou Topfast Technology Co., Ltd.

Address: Room 2201-03, Room 2206, Changfeng International 1, No. 96, Lixin No. 12 Road, Zengcheng District, Guangzhou City, Guangdong province

IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF

China IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF on sale
IRGB10B60KDPBF # Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode IGBT 600V 22A 156W TO220AB Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode ......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

IRG4PC40UDPBF IGBT Power Module High Quality High Efficiency Low Loss Operation

China IRG4PC40UDPBF IGBT Power Module  High Quality High Efficiency  Low Loss Operation on sale
IRG4PC40UDPBF IGBT Power Module High Quality High Efficiency Low Loss Operation IRG4PC40UDPBF IGBT Power Module The IRG4PC40UDPBF IGBT power module from Infineon is a high voltage (HV) insulated gate bipolar transistor (IGBT) module. It is designed for ......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

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