BF1206,115
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The BF1206,115,from NXP Semiconductors,is RF MOSFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us ......
Beijing Silk Road Enterprise Management Services Co.,LTD
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PBSS4112PANP,115 Power Mosfet Transistor NPN/NPN low VCEsat (BISS) transistor
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PBSS4112PAN 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP ......
ChongMing Group (HK) Int'l Co., Ltd
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BF1206,115
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RF Mosfet 5 V 18 mA 400MHz 30dB 6-TSSOP...
Beijing Silk Road Enterprise Management Services Co.,LTD
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High Power MOSFET FDY1002PZ Dual P-Channel (-1.5 V) Specified PowerTrench® MOSFET -20V, -0.83A, 0.5Ω
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High Power MOSFET FDY1002PZ Dual P-Channel (-1.5 V) Specified PowerTrench® MOSFET -20V, -0.83A, 0.5Ω [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 ......
Sunbeam Electronics (Hong Kong) Limited
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2N7002LT1G power mosfet ic Power Mosfet Transistor Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
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...MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available V(BR)DSS RDS(on) MAX ID MAX 60 V 7.5 @ 10 V, 500 mA 115 mA MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage (RGS = 1.0 M) VDGR 60 Vdc Drain Current − Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2) ID ID IDM ±115......
Anterwell Technology Ltd.
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High Power MOSFET Stable Process voltage DC/DC Converter MOSFET High Power DC/DC Converter voltage Stable Process
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... based on the national military standard production line, this MOSFET is designed to meet the stringent requirements of military and industrial applications where performance and durability are paramount. As a device type MOSFET, this high power MOSFET is...
Reasunos Semiconductor Technology Co., Ltd.
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F4N65L TO-220F-3L POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors
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...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power...
Shenzhen Hunt Electronics Co., Ltd
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IRF7476TRPBF MOSFET Power Electronics HEXFET Power MOSFET
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...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high power dissipation of 12W. 4. This MOSFET is ideal for applications such as DC/DC converters, audio amplifiers and motor drives. 5...
Shenzhen Sai Collie Technology Co., Ltd.
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IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET
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IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ......
Shenzhen Retechip Electronics Co., Ltd
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Through Hole N Channel Power Mosfet 55V 49A 94W TO-220 ROHS IRFZ44NPBF IRFZ44N
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...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs......
Shenzhen Koben Electronics Co., Ltd.
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