BLF1822-10,112
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..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF1822-10,112 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to ......
Rozee Electronics Co., Ltd
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BLF1822-10,112
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The BLF1822-10,112,from Ampleon USA Inc.,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us ......
Beijing Silk Road Enterprise Management Services Co.,LTD
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High Power MOSFET BSS84L Single P-Channel Logic Level Power MOSFET -50 V, -130mA, 10Ω
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High Power MOSFET BSS84L Single P-Channel Logic Level Power MOSFET -50 V, -130mA, 10Ω [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, ......
Sunbeam Electronics (Hong Kong) Limited
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IRFP9240PBF Power Mosfet Transistor P-Channel MOSFET power mosfet ic
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...Requirements • Lead (Pb)-free Available PRODUCT SUMMARY VDS (V) - 200 V RDS(on) (Max.) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with...
Anterwell Technology Ltd.
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High Power MOSFET Stable Process voltage DC/DC Converter MOSFET High Power DC/DC Converter voltage Stable Process
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... based on the national military standard production line, this MOSFET is designed to meet the stringent requirements of military and industrial applications where performance and durability are paramount. As a device type MOSFET, this high power MOSFET is...
Reasunos Semiconductor Technology Co., Ltd.
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NTMFS5C404NLT1G MOSFET Power Electronics 8-PowerTDFN Voltage N-Channel Power MOSFETs
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...MOSFET Power Electronics 8-PowerTDFN Voltage N-Channel Power MOSFETs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 52A (Ta), 370A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.75mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 181 nC @ 10......
Shenzhen Sai Collie Technology Co., Ltd.
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F4N65L TO-220F-3L POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors
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...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power...
Shenzhen Hunt Electronics Co., Ltd
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IGBT Power Module IXFN27N80- IXYS Corporation - HiPerFETTM Power MOSFETs
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... FET Type MOSFET N-Channel, Metal Oxide FET Feature Standard Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ ......
Mega Source Elec.Limited
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IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET
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IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ......
Shenzhen Retechip Electronics Co., Ltd
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Through Hole N Channel Power Mosfet 55V 49A 94W TO-220 ROHS IRFZ44NPBF IRFZ44N
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...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs......
Shenzhen Koben Electronics Co., Ltd.
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