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Cgh40025f Gan Transistor

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cgh40025f gan transistor

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IGI60L2727B1M GaN IC 600V GaN Transistor TFLGA-27 GaN With Integrated Driver

China IGI60L2727B1M GaN IC 600V GaN Transistor TFLGA-27 GaN With Integrated Driver on sale
IGI60L2727B1M GaN IC 600V GaN Transistor TFLGA-27 GaN With Integrated Driver [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

10*10mm2 Si-Doped GaN / Sapphire Substrates For GaN Transistor

China 10*10mm2 Si-Doped GaN / Sapphire Substrates For GaN Transistor on sale
10*10mm2 Si-Doped GaN / Sapphire Substrates For GaN Transistor PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are ......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

China DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors on sale
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VBE Technology Shenzhen Co., Ltd.

Address: Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China

CGH40025F Field Effect Transistor Transistors FETs MOSFETs RF Chip

China CGH40025F Field Effect Transistor Transistors FETs MOSFETs RF Chip on sale
CGH40025F Specifications Part Status Active Transistor Type HEMT Frequency 0Hz ~ 6GHz Gain 13dB Voltage - Test 28V Current Rating 7A Noise Figure - Current - Test 250mA Power - Output 30W Voltage - Rated 84V Package / Case 440166 Supplier Device Package 440166 Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. CGH40025F......
KZ TECHNOLOGY (HONGKONG) LIMITED

Address: RM4,16/F HO KING COMM CRT 2-16 FAYUEN ST MONGKOKKL

CGH40025F

China CGH40025F on sale
...refer to the data sheet, such as PDF files Docx documents, etc. We have CGH40025F high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ......
Rozee Electronics Co., Ltd

Address: Flat A1-H, 10 / F, Block A, Yue Lam Industrial Centre, 2-28 Kwai Lok Street, Kwai Chung, Hong Kong

CGH40025F

China CGH40025F on sale
... JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online ......
Beijing Silk Road Enterprise Management Services Co.,LTD

Airfast RF GaN Mosfet Power Transistor 1800 - 2200 MHz Working Frequency

China Airfast RF GaN Mosfet Power Transistor 1800 - 2200 MHz Working Frequency on sale
Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is ......
Shenzhen Weitaixu Capacitor Co.,Ltd

Address: 9E, Block A, Huaqiang Plaza, Huaqiangbei, Futian, Shenzhen, China

QPD1016 RF Mosfet 55V 1A 1.7GHz 23.9dB 500W NI-780 RF Transistors

China QPD1016 RF Mosfet 55V 1A 1.7GHz 23.9dB 500W NI-780 RF Transistors on sale
QPD1016 RF JFET Transistors DC-1.7 GHz 500W 50V GaN RF Tr Manufacturer: Qorvo Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Operating Frequency: DC to 1.7 GHz Gain: 23.9 dB Transistor Polarity: N-Channel Vds......
Wisdtech Technology Co.,Limited

Address: Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China

HMC199MS8ETR Cellular RF Power Transistors For High Gain And Efficiency

China HMC199MS8ETR Cellular RF Power Transistors For High Gain And Efficiency on sale
HMC199MS8ETR RF Power Transistor For High Gain And Efficiency HMC199MS8ETR RF Power Transistors Product Description: The HMC199MS8ETR is a GaN-based RF power transistor that uses the latest Gallium Nitride (GaN) technology. It is designed for use in high ......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

1.2g 30W GaN Anti-Module for Anti Drone System GaN Autel Anti Fpv C-Uas Mavic 3 Autel Fpv Drone Ua Anti Drone Module

China 1.2g 30W GaN Anti-Module for Anti Drone System GaN Autel Anti Fpv C-Uas Mavic 3 Autel Fpv Drone Ua Anti Drone Module on sale
... Product Parameters 1.2GHz anti drone module, GaN Technology, 30W. Power and frequency support Cusyomization. GaN transistors are more efficient. The efficiency minus the driver (heating power consumption) is about 55-65%. In fact, the working ......
Padi Fly Technology Co., Ltd

Address: 4-6F,Aishang Technology Park Building 2#,Honghu Road No.108, BaoAn District, Shenzhen,Guangdong Province 518105,PRC

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Products: 1.2g 30W GaN Anti-Module for Anti Drone System GaN Autel Anti Fpv C-Uas Mavic 3 Autel Fpv Drone Ua Anti Drone Module

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