BSC072N08NS5ATMA1 MOSFET Power Electronics N-Channel OptiMOSTM5 Power-Transistor 80V
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BSC072N08NS5ATMA1 MOSFET Power Electronics N-Channel OptiMOSTM5 Power-Transistor 80V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 74A (Tc) Drive Voltage (Max Rds On, Min Rds......
Shenzhen Sai Collie Technology Co., Ltd.
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MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G
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MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ......
Angel Technology Electronics Co
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Power amplifler 3 Pin Transistor −80V −4A B1568 pair with 2SD2399
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Power amplifler 3 Pin Transistor −80V −4A B1568 pair with 2SD2399 Features 1) Available in TO-220 FN package 2) Darling connection provides high dc current gain (hFE) 3) Damper diode is incorporated 4) Built in resistors between base and emitter 5) Two millimeters lower than TO-220 FP which allows higher density mounting 6) Complementary pair with 2SD2399 Applications Power......
Anterwell Technology Ltd.
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80V 1A SOT89 BCX56-10 NPN Medium Power Transistors
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BCX56-10# 80V 1A 1.25W NPN medium power transistors SOT89 Features ■ High current ■ Two current gain selections ■ High power dissipation capability Applications ■ Linear voltage regulators ■ Low-side switches ■ MOSFET drivers ■ Amplifiers ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
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Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS
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... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ......
Shenzhen Huahao Gaosheng Technology Co., Ltd
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High Power MOSFET FDMS007N08LC Power MOSFET 80V Single N Channel, 84A, 6.7mΩ in Power 56 Package.
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...Power MOSFET FDMS007N08LC Power MOSFET 80V Single N Channel, 84A, 6.7mΩ in Power 56 Package. [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor......
Sunbeam Electronics (Hong Kong) Limited
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RF Power Transistors MRF136 - Motorola, Inc - N-CHANNEL MOS BROADBAND RF POWER FETs
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Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. ......
Mega Source Elec.Limited
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Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V
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...Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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180MHz BCX56 NPN Bipolar Transistor 80V 1A 1.25W SOT-89 IC Chip
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...Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V Power......
Shenzhen Quanyuantong Electronics Co., Ltd.
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